Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

All prices are in USD

Bulk

QTY	Unit Price	Ext Price
2,806	Request Pricing	-

KSC1674-C

Manufacturer

Onsemi
Manufacturer's Part Number

KSC1674-C
Description

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 600 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .02 A;
Datasheet

Datasheet

2806 In Stock

Popular Products

LM317T

Comset Semiconductors

Other Regulators; No. of Terminals: 3; Terminal Pitch: 2.54 mm; Minimum Output Voltage-1: 1.2 V; Technology: BIPOLAR; Operating Temperature (TJ-Max): 125 Cel;

Details

MBR1560CT

General Instrument

MBR1560CT by General Instrument is a common cathode rectifier diode with a max forward voltage of 0.75V and max output current of 15A. It is used for efficiency applications, has a package shape of rectangular, and can operate in temperatures ranging from -65 to 150 °C.

Details

M39029/56-351

Carlisle Interconnect Technologies

CONNECTOR ACCESSORY; MIL Conformity: YES; Contact Type: CRIMP; Removal Tools: M81969/8-06, M81969/14-02; IEC Conformity: NO; Contact Gender: FEMALE;

Details

2N2222A

Comset Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

2N2222A

Bharat Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

CR0805-FX-10R0ELF

Bourns

Bourns CR0805-FX-10R0ELF is a SMT fixed resistor with 10 ohm resistance, 1% tolerance, and 0.125 W power dissipation. Ideal for applications requiring a temperature range of -55 to 155 °C, such as automotive electronics and industrial control systems.

Details

SDR0604-101KL

Bourns

SDR0604-101KL by Bourns is a surface mount fixed inductor with a nominal inductance of 100 uH. It is a general purpose inductor suitable for power applications, with a max rated current of 0.52 A and a self-resonance frequency of 9 MHz.

Details

M24308/2-1F

Defense Logistics Agency

D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Mounting Type: CABLE AND PANEL; Mating Info.: MULTIPLE MATING PARTS AVAILABLE; Empty Shell: NO;

Details

LL4148

Yangzhou Yangjie Electronics

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

FDN5618P

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Transistor Element Material: SILICON; Moisture Sensitivity Level (MSL): 1;

Details

1N4148

Rectron

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

AT90CAN128-16AU

Microchip Technology

AT90CAN128-16AU by Microchip Technology is a microcontroller with 8-bit data RAM and 16-bit address bus width. It operates at a max clock frequency of 16 MHz, making it suitable for industrial applications requiring low power mode and connectivity options like CAN, SPI, and USART. With 53 I/O lines and 8-channel 10-bit ADCs, this microcontroller offers versatile peripheral support for various embedded systems.

Details

LM555CMX

Texas Instruments

LM555CMX by Texas Instruments is an Analog Waveform Generation IC with 8 terminals. It operates at a nominal voltage of 5V and supports power supplies ranging from 5V to 15V. This versatile IC, housed in a small outline package, is commonly used for pulse and rectangular waveform generation in commercial temperature environments.

Details

LM107H/883C

General Electric Solid State

OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Wideband: NO;

Details

BSS138BKW,115

NXP Semiconductors

NXP Semiconductors' BSS138BKW,115 is a N-CHANNEL FET with 60V DS breakdown voltage and 0.32A ID. Ideal for SWITCHING applications, it features a built-in diode, 1.6 ohm RDS(on), and operates in ENHANCEMENT MODE. Suitable for surface mount with GULL WING terminals, it meets AEC-Q101 standards.

Details

SMBJ18CA

Daco Semiconductor

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

1N4148

Vishay Telefunken

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

PAP-06V-S

J S T Mfg

PAP-06V-S by J S T Mfg is a 6-contact BOARD CONNECTOR with 94V-0 UL Flammability Code. It has FEMALE contacts, CRIMP termination, and comes WITH CABLE ASSEMBLY for CABLE mounting applications.

Details

SMBJ18CA

Meritek Electronics

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

2N2222A

Semicoa

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

KSC1674-C Technical Details

TYPE	DESCRIPTION
Nominal Transition Frequency (fT):	600 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.02 A
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	AMPLIFIER
JEDEC-95 Code:	TO-92
Polarity or Channel Type:	NPN
Surface Mount:	NO
Minimum DC Current Gain (hFE):	40
No. of Terminals:	3
Maximum Power Dissipation (Abs):	.25 W
Maximum Collector-Emitter Voltage:	20 V
Terminal Position:	BOTTOM
Package Style (Meter):	CYLINDRICAL
JESD-30 Code:	O-PBCY-T3
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	THROUGH-HOLE
Highest Frequency Band:	ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature:	150 Cel
Maximum Collector-Base Capacitance:	1.2 pF
Maximum VCEsat:	.3 V
Maximum Power Dissipation Ambient:	.25 W

Category Top Products

BFR92

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .025 A;

KSC1730

Onsemi

The Onsemi KSC1730 is an NPN RF BJT with a max VCEsat of 0.5V, ideal for amplifier applications in the UHF band. It has a min hFE of 40, max fT of 1100MHz, and can handle a max IC of 0.05A.

BFR96

Space Power Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .075 A; Qualification: Not Qualified;

TIS108

Texas Instruments

TIS108 by Texas Instruments is an NPN BJT transistor with a max power dissipation of 0.25W and max collector current of 0.05A, ideal for amplifier applications in the very high frequency band. With a min DC current gain of 25 and nominal transition frequency of 3.5MHz, it operates at temperatures up to 150°C in a cylindrical package with wire terminals.

BFR93AW

New Jersey Semiconductor Products

NPN; Configuration: SINGLE; Nominal Transition Frequency (fT): 5000 MHz; Maximum Collector Current (IC): .035 A; No. of Elements: 1; Transistor Element Material: SILICON;

2SC4399-3

Onsemi

RF Small Signal Bipolar Transistors;

BFS17,235

NXP Semiconductors

The NXP Semiconductors BFS17,235 is a RF BJT transistor with NPN polarity and single configuration. It operates in the ultra high frequency band up to 1600 MHz, suitable for amplifier applications. With a max power dissipation of 0.3 W and operating temperature of 150°C, it offers reliable performance in small outline packages.

BF199

Onsemi

BF199 by Onsemi is a NPN BJT transistor for RF applications. With hFE of 40, it operates at up to 150 °C with fT of 750 MHz. Ideal for amplification in very high frequency bands, it has a max IC of 0.1A and VCE of 25V in a cylindrical package.

MCH4009

Onsemi

The Onsemi MCH4009 is an NPN RF BJT with a max power dissipation of 0.12W, fT of 20GHz, and IC of 0.04A. Ideal for high-frequency applications requiring a single configuration in surface-mount technology, operating up to 150 °C.

MPS3563RLRA

Onsemi

MPS3563RLRA by Onsemi is an NPN BJT transistor with a max. collector-emitter voltage of 12V, ideal for amplifier applications in the ultra-high frequency band. It has a min. DC current gain of 20 and operates at up to 150 °C, with a max. power dissipation of 0.625W in a cylindrical package style.

BLF871,112

Ampleon Netherlands B V

RF Small Signal Bipolar Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;

MPS3563RLRP

Onsemi

MPS3563RLRP by Onsemi is an NPN RF BJT transistor with a max fT of 600 MHz. It operates at up to 150 °C, has a Vceo of 12V, and IC of 0.05A. Ideal for ultra-high frequency amplifier applications due to its low collector-base capacitance and single configuration in a cylindrical package.

SMA5101

Onsemi

SMA5101 by Onsemi is an NPN RF BJT with 4 elements and 6 terminals. It operates in KU band, with max power dissipation of 0.28W and max collector-emitter voltage of 6V. Ideal for high-frequency applications requiring small outline packages and flat terminal forms.

3001

Advanced Power Technology

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .2 A; No. of Elements: 1; Highest Frequency Band: S BAND;

MMBR5031LT1

NXP Semiconductors

NXP Semiconductors' MMBR5031LT1 is a NPN RF BJT transistor with 3 terminals, operating in the ultra-high frequency band up to 1000 MHz. It has a max collector-emitter voltage of 10V and can handle a collector current of 0.02A. Ideal for amplifier applications, this transistor offers a small outline package style and Gull Wing terminal form for surface mount assembly.

BFR99A

STMicroelectronics

BFR99A by STMicroelectronics is a PNP RF small signal BJT designed for amplifier applications. It features a max power dissipation of 0.36 W, operates at frequencies up to 2300 MHz, and withstands temperatures up to 200 °C. Its cylindrical metal package ensures durability in ultra-high frequency environments.

BFR93AW

Vishay Telefunken

RF Small Signal Bipolar Transistors; Surface Mount: YES; Package Shape: RECTANGULAR; Terminal Position: DUAL; No. of Terminals: 3; JESD-30 Code: R-PDSO-G3;

JANTXV2N2907A

Vpt Components

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .6 A; JEDEC-95 Code: TO-206AA; Package Shape: ROUND;

START499D

STMicroelectronics

START499D by STMicroelectronics is an NPN RF small signal BJT designed for surface mount applications. It features a max power dissipation of 1.7 W, operates up to 150 °C, and supports a collector current of 1 A. Ideal for compact electronic circuits requiring efficient signal amplification.

BFS17PE6327HTSA1

Infineon Technologies

Infineon's BFS17PE6327HTSA1 is an NPN RF BJT for amplifiers in the UHF band. With a max fT of 2500 MHz, it has a hFE of 40 and can handle up to 15V VCE. The transistor comes in a small outline package with gull wing terminals, making it suitable for high-frequency applications.