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BSN20BKR

Manufacturer

Nexperia
Manufacturer's Part Number

BSN20BKR
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Shape: RECTANGULAR; Maximum Drain-Source On Resistance: 3.2 ohm;
Datasheet

Datasheet

3948 In Stock

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BSN20BKR Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	.265 A
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	3
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Drain-Source On Resistance:	3.2 ohm
Moisture Sensitivity Level (MSL):	1
Other Names:	568-12638-1 568-12638-2 568-12638-2-ND 2156-BSN20BKRTR 1727-2341-6 568-12638-6 1727-2341-2 1727-2341-1 934068054215 568-12638-1-ND 568-12638-6-ND 5202-BSN20BKRTR
Maximum Feedback Capacitance (Crss):	7 pF
JEDEC-95 Code:	TO-236AB
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	60 V
Additional Features:	LOGIC LEVEL COMPATIBLE
Reference Standard:	IEC-60134
Peak Reflow Temperature (C):	260

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