Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

NT6AN512T32AV-J2

Manufacturer

Nanya Technology
Manufacturer's Part Number

NT6AN512T32AV-J2
Description

LPDDR4 DRAM; Temperature Grade: OTHER; No. of Terminals: 200; Package Code: VFBGA; Package Shape: RECTANGULAR; Width: 10 mm;
Datasheet

Datasheet

Not In Stock

Popular Products

1N4148

International Components

RECTIFIER DIODE; Surface Mount: NO; No. of Elements: 1; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Maximum Reverse Recovery Time: .004 us;

Details

1N4148

Shenzhen Yixinsemi Electronics

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

1N4148WS

Bytesonic Electronics

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

1N4148WS

Jiangsu Changjiang Electronics Technology

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

FDC5614P

MSKSEMI SEMICONDUCTOR

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Transistor Element Material: SILICON; Minimum DS Breakdown Voltage: 60 V;

Details

SS14

Onsemi

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

BSS123,215

Nexperia

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 1; No. of Terminals: 3; Maximum Time At Peak Reflow Temperature (s): 30;

Details

SMBJ18CA

Taiwan Semiconductor

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

LM555CM

Texas Instruments

LM555CM by Texas Instruments is an Analog Waveform Generation IC with a supply voltage range of 4.5V to 16V and max operating temperature of 70°C. It comes in a small outline package, suitable for applications requiring pulse generation or rectangular waveform outputs. With surface mount capability and low supply current of 15mA, it is ideal for commercial-grade electronic circuits.

Details

LM555CM

Renesas Electronics

Analog Waveform Generation Functions; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;

Details

LM358MX

ROHM

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: LSOP; Package Shape: RECTANGULAR;

Details

DS18B20U+

Maxim Integrated

TEMPERATURE SENSOR,SWITCH/DIGITAL OUTPUT,SERIAL; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Shape or Style: SQUARE; Housing: PLASTIC; Minimum Supply Voltage: 3 V;

Details

1N4148WT

Changzhou Galaxy Century Microelectronics

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

43025-0400

Molex

The Molex 43025-0400 is a board connector with 4 contacts, 2 rows, and a mating contact pitch of 0.118". It has a body length of 0.27", insulation resistance of 1Gohm, and operates b/w -40 to 105°C. Ideal for commercial applications requiring a female connector with crimp termination and UL94V-0 flammability rating.

Details

ABS07-32.768KHZ-T

Abracon

Abracon ABS07-32.768KHZ-T crystal oscillator offers 20 ppm frequency tolerance, 144% stability, and 70000 ohm series resistance. Ideal for applications requiring 0.032768 MHz frequency precision in a compact surface-mount design with gold over nickel finish.

Details

SMBJ18CA

Alpha & Omega Semiconductor

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

CRG0805F10R

TE Connectivity

TE Connectivity's CRG0805F10R is a 10 ohm fixed resistor with 1% tolerance and 0.125 W power dissipation. It features thick film technology, SMT package style, and matte tin over nickel terminal finish. Ideal for surface mount applications in electronics, offering a temperature coefficient of 200 ppm/°C and operating voltage of 150 V.

Details

261

New England Microwave

Other Interface ICs; No. of Terminals: 14; Package Equivalence Code: FL14(UNSPEC); Power Supplies (V): +-5,-15; Package Body Material: PLASTIC/EPOXY; Surface Mount: YES;

Details

2N2222A

Dionics-usa

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

SMBJ18CA

General Instrument

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

NT6AN512T32AV-J2 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Organization:	512MX32
Maximum Seated Height:	1 mm
Access Mode:	MULTI BANK PAGE BURST
Minimum Supply Voltage (Vsup):	1.06 V
Surface Mount:	YES
No. of Terminals:	200
No. of Words:	536870912 words
Terminal Position:	BOTTOM
Package Style (Meter):	GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Technology:	CMOS
JESD-30 Code:	R-PBGA-B200
Package Shape:	RECTANGULAR
Terminal Form:	BALL
Operating Mode:	SYNCHRONOUS
Maximum Operating Temperature:	105 Cel
Package Code:	VFBGA
Width:	10 mm
No. of Ports:	1
Memory Density:	17179869184 bit
Memory IC Type:	LPDDR4 DRAM
Minimum Operating Temperature:	-30 Cel
Memory Width:	32
No. of Functions:	1
Length:	15 mm
No. of Words Code:	512M
Nominal Supply Voltage / Vsup (V):	1.1
Additional Features:	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX
Terminal Pitch:	.8 mm
Temperature Grade:	OTHER
Maximum Supply Voltage (Vsup):	1.17 V

Category Top Products

MT49H8M36BM-25E:B

Micron Technology

Micron Technology's MT49H8M36BM-25E:B is a DDR DRAM with 8MX36 organization, operating at 400 MHz. It has a memory density of 301989888 bit and supports multi-bank page burst access mode. With a max clock frequency of 400 MHz, it is suitable for high-performance applications requiring fast data processing.

IS42S16100H-7TLI-TR

Integrated Silicon Solution

IS42S16100H-7TLI-TR by Integrated Silicon Solution is a 1MX16 Synchronous DRAM with 16-bit memory width. Operating at 3.3V, it features dual bank page burst access mode and self-refresh capability. Ideal for industrial applications requiring fast data access with a max operating temperature of 85°C.

IS42VM16200D-75BLI

Integrated Silicon Solution

IS42VM16200D-75BLI by Integrated Silicon Solution is a 2MX16 Synchronous DRAM with 16-bit memory width. It operates at 1.8V, has a max access time of 6ns, and features dual bank page burst access mode. Ideal for industrial applications requiring high-speed and reliable memory performance in compact spaces.

MT53D512M32D2DS-046AAT:D

Micron Technology

Micron Technology's MT53D512M32D2DS-046AAT:D is a LPDDR4 DRAM with 512MX32 organization, operating at 2136.7 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory with a wide temperature range from -40 to 105°C.

MT40A4G8NEA-062E:F

Micron Technology

MT40A4G8NEA-062E:F by Micron Technology is a DDR4 DRAM with 4GX8 organization, operating at up to 1600 MHz. It features a thin profile grid array package, common I/O type, and self-refresh capability. Ideal for applications requiring high-speed synchronous memory with a density of 34 Gb and low power consumption.

MT48LC4M32B2P-6AXIT:L

Micron Technology

Micron Technology's MT48LC4M32B2P-6AXIT:L is a 3.3V, 4MX32 Synchronous DRAM with 5.4ns access time and 134217728-bit memory density. Ideal for industrial applications, it features self-refresh mode, operates synchronously, and supports four-bank page burst access mode.

IS42S16400J-5TL

Integrated Silicon Solution

IS42S16400J-5TL by Integrated Silicon Solution is a 4MX16 Synchronous DRAM with 3.3V supply voltage, operating at up to 200MHz clock frequency. It features self-refresh and common I/O for various applications requiring fast memory access and high data density in a small outline package.

M391T6553CZ3-CD5

Samsung

Samsung M391T6553CZ3-CD5 DDR DRAM Module has 64MX72 organization, operates at 267 MHz with 1.8V supply. Ideal for high-performance computing applications due to its synchronous operation and 72-bit memory width.

MT46H128M16LFB7-6IT:B

Micron Technology

Micron Technology's MT46H128M16LFB7-6IT:B is a DDR1 DRAM with 128MX16 organization, operating at 1.8V. It features synchronous operation, self-refresh capability, and a max access time of 5ns. Ideal for industrial applications requiring high memory density and fast data processing.

IS43LR32160C-6BLI

Integrated Silicon Solution

IS43LR32160C-6BLI by Integrated Silicon Solution is a 16MX32 DDR1 DRAM with 166 MHz clock frequency. Operating at 1.8V, it offers 5.5 ns access time and supports four bank page burst access mode. Ideal for industrial applications requiring high memory density and fast data processing capabilities.

MT46H32M16LFBF-6IT:C

Micron Technology

Micron Technology's MT46H32M16LFBF-6IT:C is a 32MX16 DDR1 DRAM with 536870912 bit memory density. It operates at 166 MHz clock frequency, suitable for industrial applications requiring fast access time of 5 ns. The package style is grid array with very thin profile and fine pitch, making it ideal for space-constrained designs.

MT48LC4M32B2P-6A:LTR

Micron Technology

Micron Technology's MT48LC4M32B2P-6A:LTR is a 3.3V Synchronous DRAM with 4MX32 organization, operating at 0-70°C. Featuring self-refresh and four-bank page burst access mode, it offers a memory density of 134217728 bits for commercial applications requiring fast access times of up to 5.4 ns.

EDB4432BBBJ-1D-F

Micron Technology

Micron Technology's EDB4432BBBJ-1D-F is a 128MX32 LPDDR2 DRAM with 4294967296 bit memory density. Operating at 1.2V, it features synchronous mode and self-refresh capability. Ideal for applications requiring high-speed data processing in compact devices due to its very thin profile and fine pitch package style.

MT47H64M16HR-25EIT:G

Micron Technology

Micron Technology's MT47H64M16HR-25EIT:G is a DDR2 DRAM with 64MX16 organization, operating at 400 MHz. It features a 1.8V supply voltage and supports multi-bank page burst access mode. Ideal for industrial applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.

IS43TR16256A-15HBLI

Integrated Silicon Solution

IS43TR16256A-15HBLI by Integrated Silicon Solution is a 256MX16 DDR3 DRAM with 4294967296 bit memory density. It operates synchronously at 1.5V, featuring self-refresh and industrial temperature grade. Ideal for applications requiring high-speed data processing in compact electronic devices.

K4S641632H-TC75

Samsung

Samsung's K4S641632H-TC75 is a 4MX16 DRAM with 3.3V supply, operating at 133MHz. It features synchronous operation, self-refresh capability, and a small outline package. Ideal for applications requiring high-speed memory access in commercial temperature environments.

MT40A2G8NRE-083E:B

Micron Technology

Micron Technology's MT40A2G8NRE-083E:B is a DDR4 DRAM with 2GX8 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and dual bank page burst access mode. This thin profile memory module is ideal for applications requiring high-speed data processing in compact electronic devices.

MT40A1G16RC-062EIT:BTR

Micron Technology

DDR4 DRAM; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Finish: TIN SILVER COPPER; Peak Reflow Temperature (C): 260; JESD-609 Code: e1;

MT48LC16M16A2P-7EIT:D

Micron Technology

Micron Technology's MT48LC16M16A2P-7EIT:D is a 16MX16 Synchronous DRAM with 3.3V supply, operating at up to 143MHz clock frequency. Ideal for industrial applications, it offers a memory density of 268MB and supports common I/O type with self-refresh capability.

K4B2G1646Q-BCK0

Samsung

Samsung's K4B2G1646Q-BCK0 DDR3 DRAM features 128MX16 organization, operates at 800 MHz, and has a memory density of 2147483648 bit. Ideal for applications requiring high-speed data processing and storage in devices like computers, servers, and networking equipment.