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K4B2G1646Q-BCK0

Manufacturer

Samsung
Manufacturer's Part Number

K4B2G1646Q-BCK0
Description

DDR3 DRAM; Temperature Grade: OTHER; No. of Terminals: 96; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
Datasheet

Datasheet

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K4B2G1646Q-BCK0 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Standby Current:	.011 Amp
Organization:	128MX16
Output Characteristics:	3-STATE
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Maximum Seated Height:	1.2 mm
Access Mode:	MULTI BANK PAGE BURST
Minimum Supply Voltage (Vsup):	1.425 V
Sub-Category:	DRAMs
Surface Mount:	YES
Maximum Supply Current:	219 mA
No. of Terminals:	96
Maximum Clock Frequency (fCLK):	800 MHz
No. of Words:	134217728 words
Terminal Position:	BOTTOM
Package Style (Meter):	GRID ARRAY, THIN PROFILE, FINE PITCH
Technology:	CMOS
JESD-30 Code:	R-PBGA-B96
Package Shape:	RECTANGULAR
Terminal Form:	BALL
Operating Mode:	SYNCHRONOUS
Maximum Operating Temperature:	85 Cel
Package Code:	TFBGA
Width:	7.5 mm
Input/Output Type:	COMMON
No. of Ports:	1
Memory Density:	2147483648 bit
Self Refresh:	YES
Sequential Burst Length:	8
Memory IC Type:	DDR3 DRAM
Minimum Operating Temperature:	0 Cel
Memory Width:	16
No. of Functions:	1
Qualification:	Not Qualified
Package Equivalence Code:	BGA96,9X16,32
Refresh Cycles:	8192
Interleaved Burst Length:	8
Length:	13.3 mm
Maximum Access Time:	.225 ns
No. of Words Code:	128M
Nominal Supply Voltage / Vsup (V):	1.5
Additional Features:	AUTO/SELF REFRESH
Peak Reflow Temperature (C):	NOT SPECIFIED
Terminal Pitch:	.8 mm
Temperature Grade:	OTHER
Maximum Supply Voltage (Vsup):	1.575 V
Power Supplies (V):	1.5

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