Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

All prices are in USD

Bulk

QTY	Unit Price	Ext Price
932	Request Pricing	-

MT46V32M16P-5B:FTR

Manufacturer

Micron Technology
Manufacturer's Part Number

MT46V32M16P-5B:FTR
Description

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 66; Package Code: TSSOP; Package Shape: RECTANGULAR; Terminal Position: DUAL;
Datasheet

Datasheet

932 In Stock

Popular Products

SMBJ18CA

Silicon Standard

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

LM317T

Sgs-ates Componenti Electronici S P A

Other Regulators; No. of Terminals: 3; JESD-609 Code: e0; Terminal Position: SINGLE; Adjustability: ADJUSTABLE; Maximum Load Regulation (%): 1.5 %;

Details

2N2222A

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; Maximum Operating Temperature: 150 Cel;

Details

2N2222A

Nte Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .8 A; Terminal Form: WIRE;

Details

SS14

Vishay Semiconductors

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

2N2222A

SPC TECHNOLOGY/ MULTICOMP

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

SMMBT2222ALT1G

Onsemi

SMMBT2222ALT1G by Onsemi is a NPN BJT transistor with 3 terminals, 0.6A IC, and 40V VCE. It has a hFE of 75, fT of 300MHz, and operates up to 150°C. Ideal for small signal applications in automotive electronics due to AEC-Q101 compliance.

Details

BAV99+

Multicomp Pro

BAV99+ by Multicomp Pro is a series connected diode with 0.2A output current and 75V peak reverse voltage. Its 0.006us reverse recovery time makes it ideal for high-speed applications. This small outline rectifier diode is designed for surface mount installation in electronic circuits.

Details

2N7002

Diotec Semiconductor Ag

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Time At Peak Reflow Temperature (s): 10; Terminal Finish: MATTE TIN;

Details

2N2222A

Tt Electronics Plc

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .8 A; JESD-30 Code: O-MBCY-W3;

Details

BSS138

Panjit International

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: 3 ohm; Minimum DS Breakdown Voltage: 50 V; Terminal Form: GULL WING;

Details

FDC5614P

Onsemi

FDC5614P by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 20A Max IDM and 0.105 ohm RDS(ON), operating in ENHANCEMENT MODE at -55 to 150 °C. This SMALL OUTLINE transistor has a built-in diode, GULL WING terminals, and METAL-OXIDE SEMICONDUCTOR technology.

Details

LM107H

General Electric Solid State

OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Minimum Voltage Gain: 25000;

Details

LM358M

Fairchild Semiconductor

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;

Details

BAV99

Motorola

RECTIFIER DIODE; Surface Mount: YES; Maximum Output Current: .1 A; Maximum Reverse Recovery Time: .006 us; Maximum Repetitive Peak Reverse Voltage: 70 V; JESD-609 Code: e0;

Details

MBRS340T3G

Onsemi

MBRS340T3G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.5V and output current of 4A. It operates b/w -65°C to 150°C, making it suitable for various applications requiring high-speed switching and low power loss in a small outline package. The diode's matte tin terminal finish and dual position make it ideal for surface mount PCB designs.

Details

2N7002,215

NXP Semiconductors

2N7002,215 by NXP Semiconductors is a small signal N-CHANNEL FET with a min DS breakdown voltage of 60V and max drain current of 0.3A. It is used for switching applications in enhancement mode, operates b/w -65 to 150 °C, and has a max power dissipation of 0.2W.

Details

OPA2277UA/2K5E4

Texas Instruments

OPA2277UA/2K5E4 by Texas Instruments is a dual operational amplifier with low-offset and micropower features. It has a max input offset voltage of 100uV, nominal common mode reject ratio of 140dB, and min slew rate of 0.8V/us. Ideal for industrial applications requiring precise signal amplification in compact designs.

Details

1N4148

Jgd Semiconductors

RECTIFIER DIODE; Surface Mount: NO; Maximum Operating Temperature: 175 Cel; Maximum Reverse Recovery Time: .004 us; Maximum Non Repetitive Peak Forward Current: .5 A; Maximum Forward Voltage (VF): 1 V;

Details

2N2222A

Swampscott Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

MT46V32M16P-5B:FTR Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Organization:	32MX16
Maximum Time At Peak Reflow Temperature (s):	30
Maximum Seated Height:	1.2 mm
Access Mode:	FOUR BANK PAGE BURST
Minimum Supply Voltage (Vsup):	2.5 V
Surface Mount:	YES
Terminal Finish:	Matte Tin (Sn)
No. of Terminals:	66
No. of Words:	33554432 words
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Technology:	CMOS
JESD-30 Code:	R-PDSO-G66
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	SYNCHRONOUS
Maximum Operating Temperature:	70 Cel
Package Code:	TSSOP
Width:	10.16 mm
Other Names:	557-1212-2 557-1212-1 MT46V32M16P5BFTR 557-1212-6 MT46V32M16P-5B:F TR-ND
No. of Ports:	1
Memory Density:	536870912 bit
Self Refresh:	YES
Memory IC Type:	DDR1 DRAM
JESD-609 Code:	e3
Minimum Operating Temperature:	0 Cel
Memory Width:	16
No. of Functions:	1
Qualification:	Not Qualified
Length:	22.22 mm
Maximum Access Time:	.7 ns
No. of Words Code:	32M
Nominal Supply Voltage / Vsup (V):	2.6
Additional Features:	AUTO/SELF REFRESH
Peak Reflow Temperature (C):	260
Terminal Pitch:	.65 mm
Temperature Grade:	COMMERCIAL
Maximum Supply Voltage (Vsup):	2.7 V

Category Top Products

MT40A256M16LY-062EIT:F

Micron Technology

Micron Technology's MT40A256M16LY-062EIT:F is a DDR4 DRAM with 256MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high memory density and fast data access in thin profile devices.

M378T5663RZ3-CF7

Samsung

Samsung M378T5663RZ3-CF7 DDR DRAM with 256MX8 organization, 400 MHz clock frequency, and 1.8V supply voltage is ideal for high-speed computing applications. Featuring synchronous operation and self-refresh capability, it offers efficient performance in dual bank page burst access mode.

MT47H32M16NF-25EAIT:H

Micron Technology

Micron Technology's MT47H32M16NF-25EAIT:H is a DDR2 DRAM with 32MX16 organization, operating at 400 MHz. It features a thin profile grid array package and common I/O type, suitable for industrial applications requiring high-speed synchronous memory with self-refresh capability.

AS4C8M16SA-7TCNTR

Alliance Memory

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: TSOP2; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

MT40A512M16JY-083E:B

Micron Technology

Micron Technology's MT40A512M16JY-083E:B is a DDR4 DRAM with 512MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high memory density and fast data access in devices like servers and high-performance computing systems.

KM416C256AJ-7

Samsung

Samsung's KM416C256AJ-7 is a 256Kx16 DRAM with 70ns access time and operates at 5V. It features a small outline package, 3-state output, and fast page access mode. Ideal for commercial applications requiring high-speed memory with 512 refresh cycles and common I/O type.

IS42S16320F-7TLI

Integrated Silicon Solution

IS42S16320F-7TLI by Integrated Silicon Solution is a 32MX16 Synchronous DRAM with 3.3V supply, operating at 143MHz. It features self-refresh mode and common I/O type, suitable for industrial applications requiring fast access times and high memory density.

W9864G6KH-6

Winbond Electronics

W9864G6KH-6 by Winbond Electronics is a 3.3V, 4MX16 Synchronous DRAM with self-refresh capability. It operates in industrial temperature range (-40 to 85 °C) and features four bank page burst access mode. Ideal for applications requiring high memory density and fast access times.

MT48LC4M16A2P-6AAIT:J

Micron Technology

Micron Technology's MT48LC4M16A2P-6AAIT:J is a 3.3V Synchronous DRAM with 4MX16 organization, operating at -40 to 85 °C. It features self-refresh mode, 5.5ns access time, and industrial temperature grade suitable for memory-intensive applications like networking equipment and industrial automation systems.

IS42S16800F-6TLI-TR

Integrated Silicon Solution

IS42S16800F-6TLI-TR by Integrated Silicon Solution is an 8MX16 SYNCHRONOUS DRAM with 3.3V supply, 166 MHz clock frequency, and -40 to 85 °C operating temp. Ideal for industrial applications requiring high-speed memory access in a small outline package.

MT47H128M16RT-3:C

Micron Technology

Micron Technology's MT47H128M16RT-3:C is a DDR2 DRAM with 128MX16 organization, operating at 1.8V. It features synchronous operation, self-refresh capability, and multi-bank page burst access mode. Ideal for applications requiring high memory density and fast data processing in devices like computers and networking equipment.

W63AH2NBVABE

Winbond Electronics

Winbond Electronics' W63AH2NBVABE is a LPDDR3 DRAM with 32MX32 organization, 800 MHz clock frequency, and 1.2V nominal voltage. Ideal for applications requiring high-speed synchronous memory operations in compact devices due to its very thin profile and fine pitch grid array package style.

MT41J128M16JT-125

Micron Technology

MT41J128M16JT-125 by Micron Technology is a DDR3 DRAM with 128MX16 organization, operating at a max clock frequency of 800 MHz. It has a memory density of 2GB and is commonly used in automotive applications due to its AEC-Q100 screening level.

KVR16S11/8

Kingston Technology Company

Kingston KVR16S11/8 is a DDR3 DRAM module with 1Gx64 organization, operating at 800MHz. It has a memory density of 68719476736 bits and operates at a voltage range of 1.425V to 1.575V. Ideal for applications requiring synchronous operation and common I/O type in microelectronic assemblies.

MT53E512M32D2FW-046AAT:D

Micron Technology

Micron Technology's MT53E512M32D2FW-046AAT:D is a LPDDR4 DRAM with 512MX32 organization, operating at 2136.7 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast data processing in a compact package.

KM44C1000BJ-7

Samsung

Samsung's KM44C1000BJ-7 is a 1MX4 DRAM with 1048576 words and 70ns access time. It operates at 5V, has 3-STATE output, and uses FAST PAGE technology. Ideal for commercial applications requiring high memory density and fast data access.

W9816G6JH-6I

Winbond Electronics

W9816G6JH-6I by Winbond Electronics is a 1MX16 Synchronous DRAM with 16-bit memory width. Operating at 3.3V, it features dual bank page burst access mode and self-refresh capability. Ideal for industrial applications requiring fast data processing in a compact package.

MT41K256M16HA-125

Micron Technology

Micron Technology's MT41K256M16HA-125 is a DDR3L DRAM with 256MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. Ideal for applications requiring high memory density and fast data processing in compact devices due to its thin profile and fine pitch package style.

TC514400AZ-60

Toshiba

Toshiba's TC514400AZ-60 is a 1MX4 DRAM with 1048576 words, operating at 5V. It features a max access time of 60ns and refresh cycles of 1024, suitable for commercial applications requiring fast page access in a rectangular package style.

TC514400AP-70

Toshiba

Toshiba's TC514400AP-70 is a 1MX4 DRAM with 1048576 words, operating at 5V. It features a max access time of 70ns and refresh cycles of 1024, suitable for commercial applications requiring fast page access in a CMOS technology package.