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BSS138LT1
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ManufacturerMotorola
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Manufacturer's Part NumberBSS138LT1
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DescriptionN-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (ID): .2 A;
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Datasheet
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DetailsBSS138LT1 Technical Details
TYPE | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Drain Current (ID): | .2 A |
Sub-Category: | FET General Purpose Power |
Surface Mount: | YES |
Terminal Finish: | Tin/Lead (Sn/Pb) |
No. of Terminals: | 3 |
Maximum Power Dissipation (Abs): | .225 W |
Terminal Position: | DUAL |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PDSO-G3 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | GULL WING |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 150 Cel |
Maximum Drain-Source On Resistance: | 3.5 ohm |
Maximum Feedback Capacitance (Crss): | 5 pF |
JEDEC-95 Code: | TO-236AB |
Polarity or Channel Type: | N-CHANNEL |
JESD-609 Code: | e0 |
Minimum DS Breakdown Voltage: | 50 V |
Qualification: | Not Qualified |
Additional Features: | LOGIC LEVEL COMPATIBLE |
Maximum Drain Current (Abs) (ID): | .2 A |