MT47H64M16HR-3AIT:H by Micron Technology

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

All prices are in USD

Bulk

QTY	Unit Price	Ext Price
1,333	Request Pricing	-

MT47H64M16HR-3AIT:H

Manufacturer

Micron Technology
Manufacturer's Part Number

MT47H64M16HR-3AIT:H
Description

DDR2 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 84; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
Datasheet

Datasheet

1333 In Stock

Popular Products

LIS2DH12TR

STMicroelectronics

LIS2DH12TR by STMicroelectronics is a 3-axis accelerometer with digital voltage output. It operates b/w -40 to 85°C, with supply voltage range of 1.71-3.6V. Ideal for applications requiring precise motion sensing in compact spaces like wearables and IoT devices.

Details

LL4148GS08

Temic Semiconductors

LL4148GS08 by Temic Semiconductors is a glass diode with a max reverse recovery time of 0.008 us and max forward voltage of 1 V. It is a rectifier diode with a max output current of 0.15 A, ideal for applications requiring fast switching speeds and low power dissipation in electronic circuits.

Details

FT232RL-REEL

FTDI

FTDI's FT232RL-REEL is a bus controller with 28 terminals, operating at 3.3V to 5.25V. It supports USB, VBUS, and UART buses with a data transfer rate of 60MBps. Ideal for industrial applications due to its CMOS technology and compatibility with RS232, RS422, and RS485 standards.

Details

SMBJ18CA

General Instrument

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

M39029/56-351

Itt Cannon

CONNECTOR ACCESSORY; MIL Conformity: YES; Terminal Type: WIRE; IEC Conformity: NO; Alternate Contact Sources: ITT CANNON; Associated Military - Specifications: MIL-C-38999;

Details

STM32F407VGT6

STMicroelectronics

STM32F407VGT6 by STMicroelectronics is a 32-bit microcontroller with 2/3.3V power supplies, 196608 bytes RAM, and 16-Ch 12-Bit ADC channels. It is ideal for industrial applications requiring CAN, ETHERNET, I2C(3), SPI(3), UART(2), USB(2) connectivity and features DMA(16) for efficient data transfer. With a max clock frequency of 50 MHz and operating temperature range of -40 to 85 °C, it offers high performance in a compact package style (14mm x 14mm).

Details

BAV99

Panjit International

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

BAV99

Hitano Enterprise

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

SS14

Vishay Intertechnology

Vishay Intertechnology's SS14 is a Schottky rectifier diode with a max forward voltage of 0.5V and output current of 1A. Operating at up to 125°C, it has a repetitive peak reverse voltage of 40V. Ideal for surface mount applications, it suits various electronic circuits requiring efficient rectification and low forward voltage drop.

Details

BSS123LT1G

Onsemi

BSS123LT1G by Onsemi is a N-CHANNEL FET with 100V DS breakdown voltage, 0.17A drain current, and 6 ohm on resistance. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 0.225W. It comes in a small outline package with gull wing terminals and can withstand temperatures from -55 to 150°C.

Details

SMBJ18CA

Leshan Radio

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

BAV99

Eic Semiconductor

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

1N4148

Shandong Yiguang Electronic Joint Stock

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

2N7002

Rectron

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Maximum Operating Temperature: 150 Cel; Terminal Form: GULL WING;

Details

M39029/58-360

Conesys

CONNECTOR ACCESSORY; MIL Conformity: YES; Mating Contacts: M39029/57-354; Terminal Type: CRIMP; DIN Conformity: NO; MIL-Connector Accessory Name: CONTACT;

Details

LL4148

Shanghai Lunsure Electronic Technology

RECTIFIER DIODE; Surface Mount: YES; Maximum Forward Voltage (VF): 1 V; Maximum Non Repetitive Peak Forward Current: .5 A; No. of Elements: 1; Maximum Reverse Recovery Time: .004 us;

Details

SS14

Micro Commercial Components

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

SS14

Goodwork Semiconductor

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

BSS138

Siemens

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Maximum Drain-Source On Resistance: 3.5 ohm; Terminal Finish: Tin/Lead (Sn/Pb);

Details

2N2222A

Diotec Semiconductor Ag

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .6 A; Maximum Time At Peak Reflow Temperature (s): 10;

Details

MT47H64M16HR-3AIT:H Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Access Mode:	MULTI BANK PAGE BURST
Minimum Supply Voltage (Vsup):	1.7 V
Sub-Category:	DRAMs
Surface Mount:	YES
Screening Level:	AEC-Q100
Technology:	CMOS
Package Shape:	RECTANGULAR
Terminal Form:	BALL
Operating Mode:	SYNCHRONOUS
Package Code:	TFBGA
Input/Output Type:	COMMON
No. of Ports:	1
Self Refresh:	YES
Sequential Burst Length:	4,8
Memory Width:	16
Qualification:	Not Qualified
Package Equivalence Code:	BGA84,9X15,32
Additional Features:	AUTO/SELF REFRESH
Peak Reflow Temperature (C):	NOT SPECIFIED
Terminal Pitch:	.8 mm
Maximum Standby Current:	.007 Amp
Organization:	64MX16
Output Characteristics:	3-STATE
Maximum Seated Height:	1.2 mm
Maximum Supply Current:	230 mA
No. of Terminals:	84
Maximum Clock Frequency (fCLK):	333 MHz
No. of Words:	67108864 words
Terminal Position:	BOTTOM
Package Style (Meter):	GRID ARRAY, THIN PROFILE, FINE PITCH
JESD-30 Code:	R-PBGA-B84
Maximum Operating Temperature:	85 Cel
Width:	8 mm
Other Names:	MT47H64M16HR-3 AIT:H-ND MT47H64M16HR-3AIT:H
Memory Density:	1073741824 bit
Memory IC Type:	DDR2 DRAM
Minimum Operating Temperature:	-40 Cel
No. of Functions:	1
Refresh Cycles:	8192
Interleaved Burst Length:	4,8
Length:	12.5 mm
Maximum Access Time:	.45 ns
No. of Words Code:	64M
Nominal Supply Voltage / Vsup (V):	1.8
Temperature Grade:	INDUSTRIAL
Maximum Supply Voltage (Vsup):	1.9 V
Power Supplies (V):	1.8

Category Top Products

M378B5773CH0-CH9

Samsung

Samsung M378B5773CH0-CH9 DDR3 DRAM offers 256MX64 organization, operates at 667 MHz with 1.5V supply. Ideal for high-performance computing applications due to its synchronous operation and self-refresh capability.

TC511000BFTL-70

Toshiba

Toshiba's TC511000BFTL-70 is a 1MX1 DRAM with 1048576-bit memory density. It operates at 5V, has FAST PAGE access mode with 70ns max access time. Ideal for applications requiring high-speed data storage in compact devices due to its small outline, thin profile package style.

IS42S32800J-6TLI

Integrated Silicon Solution

SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 86; Package Code: TSOP2; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

K4S561632C-TC75

Samsung

Samsung's K4S561632C-TC75 is a 16MX16 Synchronous DRAM with 3.3V supply, operating at 133MHz clock frequency. Ideal for commercial applications, it offers 16777216 words memory density and supports four bank page burst access mode.

K4J10324QD-HJ1A

Samsung

Samsung's K4J10324QD-HJ1A DDR3 DRAM features 32MX32 organization, 1000 MHz clock frequency, and 32M word code. Ideal for high-performance applications requiring fast data processing and storage with a max supply current of 1000 mA.

MT46V16M16P-5BAIT:M

Micron Technology

Micron Technology's MT46V16M16P-5BAIT:M is a DDR1 DRAM with 16MX16 organization, operating at 200 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast access times.

IS42S16160J-7BL

Integrated Silicon Solution

IS42S16160J-7BL by Integrated Silicon Solution is a 16MX16 Synchronous DRAM with 268Mbit memory density. It operates at 3.3V, has a peak reflow temp of 260°C, and offers fast access time of 5.4ns. Ideal for commercial applications requiring high-speed memory in compact form factors.

IS42S32400F-7TLI-TR

Integrated Silicon Solution

IS42S32400F-7TLI-TR by Integrated Silicon Solution is a 3.3V DRAM with 4MX32 organization, 143 MHz clock frequency, and -40 to 85°C operating temperature range. Ideal for industrial applications requiring high memory density and fast access times.

NT5CC128M16JR-EK

Nanya Technology

NT5CC128M16JR-EK by Nanya Technology is a DDR DRAM with 128MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. Ideal for applications requiring high memory density and fast data processing in devices like smartphones, tablets, and networking equipment.

M378B5773DH0-CH9

Samsung

Samsung M378B5773DH0-CH9 DDR DRAM offers 256MX64 organization, operates at 667 MHz clock frequency, and has a memory width of 64. Ideal for applications requiring high-speed data processing and large memory capacity in microelectronic assemblies.

MT41K512M8DA-107AAT:P

Micron Technology

Micron Technology's MT41K512M8DA-107AAT:P is a DDR3L DRAM with 512MX8 organization, operating at 934.57 MHz. It features a thin profile grid array package suitable for industrial applications requiring high memory density and common I/O type.

MT40A1G16RC-062E:B

Micron Technology

Micron Technology's MT40A1G16RC-062E:B is a DDR4 DRAM with 1GX16 organization, operating at up to 1600 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Suitable for applications requiring high-speed memory access in thin-profile devices.

MT41J64M16JT-15EAAT:G

Micron Technology

Micron Technology's MT41J64M16JT-15EAAT:G is a DDR3 DRAM with 64MX16 organization, operating at 667 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Suitable for applications requiring high-speed memory access in automotive electronics and industrial control systems.

NT5CC256M16ER-EKI

Nanya Technology

NT5CC256M16ER-EKI by Nanya Technology is a DDR3L DRAM with 256MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. Ideal for industrial applications requiring high memory density and reliable performance in a compact grid array package.

MT16KTF2G64HZ-1G6A1

Micron Technology

Micron Technology's MT16KTF2G64HZ-1G6A1 is a 2GX64 DDR DRAM MODULE with 64-bit memory width and 137.4 Gb density. Operating at 1.35V, it features synchronous mode and self-refresh capability. Ideal for commercial applications requiring high-speed data processing in microelectronic assemblies.

IS43R16800E-6TLI

Integrated Silicon Solution

IS43R16800E-6TLI by Integrated Silicon Solution is an 8MX16 DDR1 DRAM with 134217728-bit memory density. Operating at 167 MHz, it features a 2.5V supply voltage and supports synchronous mode with self-refresh capability. Ideal for industrial applications requiring high-speed data processing in a compact form factor.

IS42S16400J-6TLI

Integrated Silicon Solution

IS42S16400J-6TLI by Integrated Silicon Solution is a 4MX16 Synchronous DRAM with 166 MHz Clock Frequency. Operating at 3.3V, it offers 4096 Refresh Cycles and supports Four Bank Page Burst Access Mode. Ideal for industrial applications requiring high-speed memory performance in compact form factors.

MT47H128M8JN-3IT:H

Micron Technology

MT47H128M8JN-3IT:H by Micron Technology is a DDR2 DRAM with 128MX8 organization and 1.8V nominal voltage. It operates synchronously at a max clock frequency of 333 MHz and is commonly used in industrial applications requiring high memory density and fast access times.

MT40A512M8SA-062EIT:F

Micron Technology

Micron Technology's MT40A512M8SA-062EIT:F is a DDR4 DRAM with 512MX8 organization, operating at 1.2V. It features synchronous mode, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high memory density and fast data access with its four-bank page burst access mode.

MT61K512M32KPA-16:BTR

Micron Technology

Micron Technology's MT61K512M32KPA-16:BTR is a GDDR6 DRAM with 512MX32 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and common I/O type. Suitable for applications requiring high memory density and fast data access in a compact form factor.