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K4S561632C-TC75
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ManufacturerSamsung
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Manufacturer's Part NumberK4S561632C-TC75
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DescriptionSYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: TSOP2; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
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Datasheet
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DetailsK4S561632C-TC75 Technical Details
| TYPE | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Standby Current: | .002 Amp |
| Organization: | 16MX16 |
| Output Characteristics: | 3-STATE |
| Maximum Seated Height: | 1.2 mm |
| Access Mode: | FOUR BANK PAGE BURST |
| Minimum Supply Voltage (Vsup): | 3 V |
| Sub-Category: | DRAMs |
| Surface Mount: | YES |
| Maximum Supply Current: | 200 mA |
| No. of Terminals: | 54 |
| Maximum Clock Frequency (fCLK): | 133 MHz |
| No. of Words: | 16777216 words |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE, THIN PROFILE |
| Technology: | CMOS |
| JESD-30 Code: | R-PDSO-G54 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | SYNCHRONOUS |
| Maximum Operating Temperature: | 70 Cel |
| Package Code: | TSOP2 |
| Width: | 10.16 mm |
| Moisture Sensitivity Level (MSL): | 3 |
| Input/Output Type: | COMMON |
| No. of Ports: | 1 |
| Memory Density: | 268435456 bit |
| Self Refresh: | YES |
| Sequential Burst Length: | 1,2,4,8,FP |
| Memory IC Type: | SYNCHRONOUS DRAM |
| Minimum Operating Temperature: | 0 Cel |
| Memory Width: | 16 |
| No. of Functions: | 1 |
| Qualification: | Not Qualified |
| Package Equivalence Code: | TSOP54,.46,32 |
| Refresh Cycles: | 8192 |
| Interleaved Burst Length: | 1,2,4,8 |
| Length: | 22.22 mm |
| Maximum Access Time: | 5.4 ns |
| No. of Words Code: | 16M |
| Nominal Supply Voltage / Vsup (V): | 3.3 |
| Additional Features: | AUTO/SELF REFRESH |
| Peak Reflow Temperature (C): | 240 |
| Terminal Pitch: | .8 mm |
| Temperature Grade: | COMMERCIAL |
| Maximum Supply Voltage (Vsup): | 3.6 V |
| Power Supplies (V): | 3.3 |