MT40A256M16LY-062EIT:F by Micron Technology

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

All prices are in USD

Bulk

QTY	Unit Price	Ext Price
1,743	Request Pricing	-

MT40A256M16LY-062EIT:F

Manufacturer

Micron Technology
Manufacturer's Part Number

MT40A256M16LY-062EIT:F
Description

DDR4 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 96; Package Code: TFBGA; Package Shape: RECTANGULAR; Operating Mode: SYNCHRONOUS;
Datasheet

Datasheet

1743 In Stock

Popular Products

MMBT3906LT1G

Onsemi

MMBT3906LT1G by Onsemi is a PNP BJT with VCEsat of 0.4V, hFE of 30, and fT of 250MHz. Ideal for small signal applications in electronics due to its low power dissipation, high transition frequency, and compact SOT-23 package. Suitable for use in temperature-sensitive environments with an operating range from -65°C to 150°C.

Details

LM358N

Fairchild Semiconductor

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;

Details

MBRA340T3G

Onsemi

MBRA340T3G by Onsemi is a Schottky rectifier diode with 40V reverse test voltage and 3A max output current. Ideal for power applications, it operates b/w -55 to 150°C, features matte tin terminal finish, and comes in a small outline package.

Details

SS14

Taiwan Semiconductor

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

2N2222A

Digitron Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

1N4148

Shenzhen Yixinsemi Electronics

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

LM358M

Raytheon Semiconductor

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;

Details

ERJU06F10R0V

Panasonic

ERJU06F10R0V by Panasonic is an 0805 size SMT fixed resistor with a resistance of 10 ohm and 1% tolerance. It operates b/w -55 to 155 °C, suitable for AEC-Q200 standards in automotive applications due to its high temperature coefficient of 100 ppm/°C. With a max operating voltage of 150 V and power dissipation of 0.125 W, it is ideal for surface mounting type.

Details

BSS138

Jiangsu Changjiang Electronics Technology

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Maximum Drain Current (ID): .22 A; Package Shape: RECTANGULAR;

Details

1N4148WS

Synsemi

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

2N7002

Nexperia

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .83 W; No. of Elements: 1; Transistor Application: SWITCHING;

Details

SMBJ18CA

Shenzhen Socay Electronics

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

M39029/58360

Souriau

CONNECTOR ACCESSORY; Associated Military - Specifications: MIL-DTL-38999; Tool Settings: M22520/2-09; Terminal Type: CRIMP; MIL Conformity: YES; Mating Contacts: M39029/56348;

Details

ULN2003ADR

Texas Instruments

ULN2003ADR by Texas Instruments is a NPN BJT with 7 elements, max IC of 0.5A, and VCEsat of 1.6V. Ideal for switching applications in small outline packages with Gull Wing terminals.

Details

SBAV99LT1G

Onsemi

SBAV99LT1G by Onsemi is a rectifier diode with a max repetitive peak reverse voltage of 100V. It has a small outline package style and a fast max reverse recovery time of 0.006 us. It is commonly used in applications requiring low power dissipation and high operating temperatures.

Details

NUP2105LT1G

Onsemi

NUP2105LT1G by Onsemi is a Transient Suppression Device with 350W power dissipation, 29.1V breakdown voltage, and 44V clamping voltage. Commonly used in electronic circuits for surge protection due to its bidirectional polarity and silicon diode element material.

Details

LD1117S33TR

STMicroelectronics

LD1117S33TR by STMicroelectronics is a fixed positive single output LDO regulator with a nominal output voltage of 3.3V and max output current of 1.3A. It has a small outline package style, operates at an adjustable temperature range from 0 to 125°C, and is ideal for applications requiring stable voltage regulation in compact electronic devices.

Details

CR0805-FX-10R0ELF

Bourns

Bourns CR0805-FX-10R0ELF is a SMT fixed resistor with 10 ohm resistance, 1% tolerance, and 0.125 W power dissipation. Ideal for applications requiring a temperature range of -55 to 155 °C, such as automotive electronics and industrial control systems.

Details

1N4148

Gulf Semiconductor

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

2N2222A

National Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .5 A;

Details

MT40A256M16LY-062EIT:F Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Organization:	256MX16
Maximum Time At Peak Reflow Temperature (s):	30
Maximum Seated Height:	1.2 mm
Access Mode:	DUAL BANK PAGE BURST
Minimum Supply Voltage (Vsup):	1.14 V
Surface Mount:	YES
Terminal Finish:	TIN SILVER COPPER
No. of Terminals:	96
No. of Words:	268435456 words
Terminal Position:	BOTTOM
Package Style (Meter):	GRID ARRAY, THIN PROFILE, FINE PITCH
Technology:	CMOS
JESD-30 Code:	R-PBGA-B96
Package Shape:	RECTANGULAR
Terminal Form:	BALL
Operating Mode:	SYNCHRONOUS
Maximum Operating Temperature:	95 Cel
Package Code:	TFBGA
Width:	7.5 mm
Moisture Sensitivity Level (MSL):	3
Other Names:	MT40A256M16LY-062EIT:F
No. of Ports:	1
Memory Density:	4294967296 bit
Self Refresh:	YES
Memory IC Type:	DDR4 DRAM
JESD-609 Code:	e1
Minimum Operating Temperature:	-40 Cel
Memory Width:	16
No. of Functions:	1
Length:	13.5 mm
No. of Words Code:	256M
Nominal Supply Voltage / Vsup (V):	1.2
Additional Features:	AUTO/SELF REFRESH
Peak Reflow Temperature (C):	260
Terminal Pitch:	.8 mm
Temperature Grade:	INDUSTRIAL
Maximum Supply Voltage (Vsup):	1.26 V

Category Top Products

MT41K128M16JT-125IT

Micron Technology

Micron Technology's MT41K128M16JT-125IT is a DDR3L DRAM with 128MX16 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high memory density and fast data access in thin profile devices.

M378B5673EH1-CF8

Samsung

Samsung M378B5673EH1-CF8 DDR DRAM Module has 256MX64 organization, operates at 533 MHz with 3-STATE output. Ideal for high-performance computing applications due to its synchronous operation and dual bank page burst access mode.

W9864G6KH-6

Winbond Electronics

W9864G6KH-6 by Winbond Electronics is a 3.3V, 4MX16 Synchronous DRAM with self-refresh capability. It operates in industrial temperature range (-40 to 85 °C) and features four bank page burst access mode. Ideal for applications requiring high memory density and fast access times.

MTA18ASF2G72AZ-2G3A1

Micron Technology

Micron Technology's MTA18ASF2G72AZ-2G3A1 is a DDR DRAM MODULE with 2GX72 organization, 72 memory width, and 154618822656 bit memory density. It operates synchronously at 1.2V and features self-refresh capability. Ideal for applications requiring high-speed data processing in servers or workstations.

IS42S16160J-7TLI-TR

Integrated Silicon Solution

IS42S16160J-7TLI-TR by Integrated Silicon Solution is a 16MX16 Synchronous DRAM with 3.3V supply voltage, operating at -40 to 85 °C. It features SYNCHRONOUS mode, SELF REFRESH capability, and FOUR BANK PAGE BURST access mode. Ideal for industrial applications requiring high memory density and fast access times.

MT47H128M16RT-25EAAT:C

Micron Technology

Micron Technology's MT47H128M16RT-25EAAT:C is a DDR2 DRAM with 128MX16 organization, operating at 400 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast access times.

MSM5416273-50GS-K

Lapis Semiconductor

MSM5416273-50GS-K by Lapis Semiconductor is a 256Kx16 DRAM with synchronous operation at 5V. It features fast page access mode, 50ns max access time, and video DRAM memory IC type. Ideal for applications requiring high-speed data storage in commercial temperature environments.

MT41K256M16TW-107AAT:P

Micron Technology

Micron Technology's MT41K256M16TW-107AAT:P is a DDR3L DRAM with 256MX16 organization, operating at 934.57 MHz. It features a thin profile grid array package suitable for industrial applications requiring high memory density and common I/O type. With self-refresh capability and AEC-Q100 screening level, it offers reliable performance in harsh environments.

AS4C256M16D4-83BCN

Alliance Memory

Alliance Memory's AS4C256M16D4-83BCN is a 256MX16 DDR4 DRAM with 1200 MHz clock frequency, 95°C operating temp, and 1.2V supply voltage. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.

AS4C512M16D3LB-12BIN

Alliance Memory

Alliance Memory's AS4C512M16D3LB-12BIN is a DDR3L DRAM with 512MX16 organization, operating at 800 MHz. It features common I/O type, self-refresh mode, and synchronous operation. Ideal for industrial applications requiring high memory density and fast data processing capabilities.

S70KL1282DPBHA020

Cypress Semiconductor

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; JESD-30 Code: R-PBGA-B24; Screening Level: AEC-Q100;

MT48LC8M16A2P-75IT

Micron Technology

MT48LC8M16A2P-75IT by Micron Technology is a 8MX16 Synchronous DRAM with a memory density of 134217728 bit. It operates at a max clock frequency of 133 MHz and has a max access time of 5.4 ns. This memory module is commonly used in industrial applications requiring high-speed data storage and retrieval.

MT41K512M16HA-125AIT:ATR

Micron Technology

Micron Technology's MT41K512M16HA-125AIT:ATR is a DDR3L DRAM with 512MX16 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high memory density and fast data access in harsh environments.

MT48LC16M16A2B4-6AIT:G

Micron Technology

MT48LC16M16A2B4-6AIT:G by Micron Technology is a 16MX16 Synchronous DRAM with 167 MHz clock frequency, 5.4 ns access time, and 8192 refresh cycles. It is ideal for industrial applications requiring high-speed memory operations in a compact grid array package with very thin profile and fine pitch design.

MT48LC4M32B2B5-6A:LTR

Micron Technology

Micron Technology's MT48LC4M32B2B5-6A:LTR is a 4MX32 Synchronous DRAM with 3.3V supply voltage, operating at 167MHz clock frequency. It features common I/O type and self-refresh mode, suitable for applications requiring fast memory access and low power consumption.

IS42S32400F-6BLI-TR

Integrated Silicon Solution

IS42S32400F-6BLI-TR by Integrated Silicon Solution is a 4MX32 DRAM with 3.3V supply, 166 MHz clock frequency, and -40 to 85°C operating range. Ideal for industrial applications requiring high memory density and fast access times in a grid array package.

K4G323222M-PC60

Samsung

Samsung's K4G323222M-PC60 is a 1MX32 DRAM with 3.3V supply, operating at 166MHz clock frequency. Ideal for synchronous graphics RAM applications due to its 5.5ns access time and dual bank page burst access mode. Package style flatpack, width 14mm, length 20mm, temperature grade commercial.

MT46V32M16P-5B:J

Micron Technology

Micron Technology's MT46V32M16P-5B:J is a DDR1 DRAM with 32MX16 organization, operating at 200 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in commercial temperature environments.

MT48H32M16LFB4-6IT:C

Micron Technology

Micron Technology's MT48H32M16LFB4-6IT:C is a DDR DRAM with 32MX16 organization, operating at 166 MHz. It features a very thin profile grid array package and supports common I/O type. Ideal for industrial applications requiring fast access times and low power consumption.

MT47H128M16RT-25EAIT:C

Micron Technology

Micron Technology's MT47H128M16RT-25EAIT:C is a DDR2 DRAM with 128MX16 organization, operating at 400 MHz. It features a 1.8V supply voltage and offers multi-bank page burst access mode. This industrial-grade memory IC has a thin profile grid array package suitable for various applications requiring high-speed synchronous operation.