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K4B1G0846G-BCH9

Manufacturer

Samsung
Manufacturer's Part Number

K4B1G0846G-BCH9
Description

DDR3 DRAM; No. of Terminals: 78; Package Code: FBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu);
Datasheet

Datasheet

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K4B1G0846G-BCH9 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Organization:	128MX8
Output Characteristics:	3-STATE
Maximum Time At Peak Reflow Temperature (s):	30
Sub-Category:	DRAMs
Surface Mount:	YES
Maximum Supply Current:	130 mA
Terminal Finish:	Tin/Silver/Copper (Sn/Ag/Cu)
No. of Terminals:	78
Maximum Clock Frequency (fCLK):	667 MHz
No. of Words:	134217728 words
Terminal Position:	BOTTOM
Package Style (Meter):	GRID ARRAY, FINE PITCH
Technology:	CMOS
JESD-30 Code:	R-PBGA-B78
Package Shape:	RECTANGULAR
Terminal Form:	BALL
Package Code:	FBGA
Moisture Sensitivity Level (MSL):	3
Input/Output Type:	COMMON
Memory Density:	1073741824 bit
Sequential Burst Length:	4,8
Memory IC Type:	DDR3 DRAM
JESD-609 Code:	e1
Memory Width:	8
Qualification:	Not Qualified
Package Equivalence Code:	BGA78,9X13,32
Refresh Cycles:	8192
Interleaved Burst Length:	4,8
Maximum Access Time:	.255 ns
No. of Words Code:	128M
Nominal Supply Voltage / Vsup (V):	1.5
Peak Reflow Temperature (C):	260
Terminal Pitch:	.8 mm
Power Supplies (V):	1.5

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