Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IS43QR16256B-083RBLI

Manufacturer

Integrated Silicon Solution
Manufacturer's Part Number

IS43QR16256B-083RBLI
Description

DDR4 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 96; Package Code: TFBGA; Package Shape: RECTANGULAR; Maximum Supply Current: 375 mA;
Datasheet

Datasheet

Not In Stock

Popular Products

BSS123-7-F

Diodes Incorporated

BSS123-7-F by Diodes Inc. is a N-channel FET with 100V DS breakdown voltage and 0.17A drain current. Ideal for switching applications, it features a single configuration with built-in diode, operates in enhancement mode, and has a max power dissipation of 0.3W.

Details

LL4148

Rfe International

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

STM32F103C8T6

STMicroelectronics

STM32F103C8T6 by STMicroelectronics is a 32-bit microcontroller with 48 terminals, operating at up to 16 MHz. It features 10-Ch 12-Bit ADC channels and 7 DMA channels, suitable for industrial applications requiring low power consumption and high-speed connectivity via CAN, I2C(2), SPI(2), USART(3), USB.

Details

BAV99

Shanghai Lunsure Electronic Technology

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

NDT2955

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; Package Style (Meter): SMALL OUTLINE; Maximum Drain Current (Abs) (ID): 2.5 A;

Details

2N2222A

Comset Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

2N7002

Unisonic Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Package Body Material: PLASTIC/EPOXY; Package Shape: RECTANGULAR;

Details

2N2222A

Bharat Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

2N7002

North American Philips Discrete Products Div

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (ID): .115 A;

Details

BAV99

Sprague Electric

RECTIFIER DIODE; Surface Mount: YES; Maximum Forward Voltage (VF): 1.3 V; Maximum Output Current: .1 A; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 175 Cel;

Details

BSS138BKW,115

NXP Semiconductors

NXP Semiconductors' BSS138BKW,115 is a N-CHANNEL FET with 60V DS breakdown voltage and 0.32A ID. Ideal for SWITCHING applications, it features a built-in diode, 1.6 ohm RDS(on), and operates in ENHANCEMENT MODE. Suitable for surface mount with GULL WING terminals, it meets AEC-Q101 standards.

Details

BSS138

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 3; Maximum Drain Current (ID): .2 A; Operating Mode: ENHANCEMENT MODE;

Details

2N7002,215

Nexperia

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): 30; Transistor Application: SWITCHING; Package Body Material: PLASTIC/EPOXY;

Details

ABS06-32.768KHZ-T

Abracon

Abracon's ABS06-32.768KHZ-T crystal oscillator offers 20 ppm frequency tolerance, 90000 ohm series resistance, and -40 to 85 °C operating temperature range. Ideal for applications requiring precise timing in compact designs like IoT devices and wearables.

Details

M24308/2-1F

Cristek Interconnects

D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; No. of Rows Loaded: 2; Shell Size: 1/E; Filter Feature: NO;

Details

2N2222A

Loras Industries

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

GRM155R71H103KA88D

Murata Manufacturing

The Murata Manufacturing GRM155R71H103KA88D is a ceramic capacitor with 0.01uF capacitance and 50V rated DC voltage. It has X7R temperature characteristics, -55 to 125°C operating range, and ±10% tolerance. Ideal for surface mount applications in electronics requiring compact size and high reliability.

Details

STM32H743ZIT6

STMicroelectronics

STM32H743ZIT6 by STMicroelectronics is a 32-bit microcontroller with integrated cache and a max supply voltage of 3.6V. It is commonly used in industrial applications, offering features such as 21 timers, CAN and USB connectivity, and low power mode.

Details

LL4148

TDK

RECTIFIER DIODE; Surface Mount: YES; Terminal Finish: Tin/Lead (Sn/Pb); No. of Phases: 1; No. of Elements: 1; Maximum Output Current: .2 A;

Details

LL4148

Semtech Electronics

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

IS43QR16256B-083RBLI Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Standby Current:	.058 Amp
Organization:	256MX16
Output Characteristics:	3-STATE
Maximum Seated Height:	1.2 mm
Access Mode:	DUAL BANK PAGE BURST
Minimum Supply Voltage (Vsup):	1.14 V
Surface Mount:	YES
Maximum Supply Current:	375 mA
No. of Terminals:	96
Maximum Clock Frequency (fCLK):	1200.48 MHz
No. of Words:	268435456 words
Terminal Position:	BOTTOM
Package Style (Meter):	GRID ARRAY, THIN PROFILE, FINE PITCH
Technology:	CMOS
JESD-30 Code:	R-PBGA-B96
Package Shape:	RECTANGULAR
Terminal Form:	BALL
Operating Mode:	SYNCHRONOUS
Maximum Operating Temperature:	95 Cel
Package Code:	TFBGA
Width:	7.5 mm
Other Names:	706-1734
Input/Output Type:	COMMON
No. of Ports:	1
Memory Density:	4294967296 bit
Self Refresh:	YES
Sequential Burst Length:	8
Minimum Standby Voltage:	1.14 V
Memory IC Type:	DDR4 DRAM
Minimum Operating Temperature:	-40 Cel
Memory Width:	16
No. of Functions:	1
Package Equivalence Code:	BGA96,9X16,32
Interleaved Burst Length:	8
Length:	13.5 mm
No. of Words Code:	256M
Nominal Supply Voltage / Vsup (V):	1.2
Additional Features:	AUTO/SELF REFRESH
Terminal Pitch:	.8 mm
Temperature Grade:	INDUSTRIAL
Maximum Supply Voltage (Vsup):	1.26 V

Category Top Products

MT48LC8M16A2TG-75:GTR

Micron Technology

Micron Technology's MT48LC8M16A2TG-75:GTR is a 3.3V, 8MX16 Synchronous DRAM with 70°C max temp. Features include self-refresh, 5.4ns access time, and 8388608 words capacity. Ideal for commercial applications requiring fast memory access in compact form factor.

MT53E1G16D1FW-046AIT:A

Micron Technology

LPDDR4 DRAM;

MT48LC8M16A2P-6AAIT:L

Micron Technology

Micron Technology's MT48LC8M16A2P-6AAIT:L is a 8MX16 Synchronous DRAM with 8388608 words, 134217728 bit memory density, and operates at 3.3V. It features self-refresh mode, industrial temperature grade, and is suitable for applications requiring fast access time and high memory capacity.

MT48LC16M16A2P-7EIT:GTR

Micron Technology

MT48LC16M16A2P-7EIT:GTR by Micron Technology is a 16MX16 Synchronous DRAM with a memory density of 268435456 bit. It operates at a voltage of 3.3V and has an access time of 5.4 ns. This DRAM is commonly used in industrial applications that require high-speed and reliable memory storage.

K4T51163QI-HCE7

Samsung

Samsung's K4T51163QI-HCE7 is a 32MX16 DDR2 DRAM with 84 terminals in a GRID ARRAY package. It operates at 400 MHz, has a memory density of 536870912 bit, and supports a max clock frequency of 0.4 ns. Ideal for applications requiring high-speed data processing and storage capabilities.

MT48LC4M32B2B5-6AIT:L

Micron Technology

Micron Technology's MT48LC4M32B2B5-6AIT:L is a 4MX32 SDRAM with 3.3V supply, operating at 166MHz clock frequency. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high-speed memory access in industrial environments.

M471A2K43BB1-CRC

Samsung

Samsung M471A2K43BB1-CRC DDR DRAM Module features 2GX64 organization, 64-bit memory width, and 137.4 Gb memory density. Ideal for synchronous operation in applications requiring high-speed data processing and dual bank page burst access mode.

MT41K256M16TW-107AAT:P

Micron Technology

Micron Technology's MT41K256M16TW-107AAT:P is a DDR3L DRAM with 256MX16 organization, operating at 934.57 MHz. It features a thin profile grid array package suitable for industrial applications requiring high memory density and common I/O type. With self-refresh capability and AEC-Q100 screening level, it offers reliable performance in harsh environments.

M393B4G70DM0-YK0

Samsung

Samsung M393B4G70DM0-YK0 DDR DRAM MODULE offers 4GX72 organization, 1.35V nominal voltage, and 309237645312 bit memory density. Ideal for servers requiring high-capacity and high-speed memory with synchronous operation and self-refresh capability.

AS4C256M16D3C-12BCN

Alliance Memory

Alliance Memory's AS4C256M16D3C-12BCN is a 256MX16 DDR3 DRAM with 800 MHz clock frequency, suitable for applications requiring high-speed synchronous operation. It features common I/O type, self-refresh capability, and operates at 1.5V supply voltage. Ideal for systems needing fast data access in compact form factors.

MT40A1G8WE-083EAUT:B

Micron Technology

Micron Technology's MT40A1G8WE-083EAUT:B is a DDR4 DRAM with 1GX8 organization, operating at up to 1200 MHz. It features a thin profile grid array package suitable for applications requiring high-speed synchronous memory with common I/O. The AEC-Q100 screening level makes it ideal for automotive and industrial environments.

MT53E256M32D2DS-053AUT:B

Micron Technology

Micron Technology's MT53E256M32D2DS-053AUT:B is a LPDDR4 DRAM with 256MX32 organization, operating at 1866 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in automotive electronics due to AEC-Q100 screening level.

IS42S32800J-6TLI

Integrated Silicon Solution

SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 86; Package Code: TSOP2; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

IS43QR16256B-075UBL

Integrated Silicon Solution

IS43QR16256B-075UBL by Integrated Silicon Solution is a 256MX16 DDR4 DRAM with 1333.33 MHz clock frequency, suitable for applications requiring high-speed memory access. It operates synchronously at 1.2V and features dual bank page burst access mode, making it ideal for systems demanding efficient data processing. The package style is grid array with thin profile and fine pitch, facilitating compact design integration.

MT41J256M8DA-125:K

Alliance Memory

DDR3 DRAM; No. of Terminals: 78; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; Maximum Operating Temperature: 95 Cel;

IS42S16800F-7TL

Integrated Silicon Solution

IS42S16800F-7TL by Integrated Silicon Solution is a 8MX16 Synchronous DRAM with 143 MHz clock frequency. Operating at 3.3V, it offers 4096 refresh cycles and supports common I/O type. Ideal for applications requiring high-speed memory access in commercial temperature environments.

MT47H32M16NF-25E:H

Micron Technology

Micron Technology's MT47H32M16NF-25E:H is a DDR2 DRAM with 32MX16 organization, operating at 400 MHz. It features a 1.8V supply voltage, synchronous mode, and self-refresh capability. Ideal for applications requiring high-speed memory access in devices like computers and networking equipment.

IS42S16400J-7TL-TR

Integrated Silicon Solution

IS42S16400J-7TL-TR by Integrated Silicon Solution is a 4MX16 Synchronous DRAM with 3.3V supply, 143 MHz clock frequency, and 70°C max temp. Ideal for applications requiring high-speed memory access in commercial-grade devices.

K4B2G0846D-HCH9

Samsung

Samsung's K4B2G0846D-HCH9 DDR3 DRAM features 256MX8 organization, 667 MHz clock frequency, and 2147483648 bit memory density. Ideal for high-performance computing applications requiring fast data processing and storage with a max operating temperature of 85°C.

S70KL1282DPBHI020

Cypress Semiconductor

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Maximum Clock Frequency (fCLK): 166 MHz; Technology: CMOS;