MT40A1G8WE-083EAUT:B by Micron Technology

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MT40A1G8WE-083EAUT:B

Manufacturer

Micron Technology
Manufacturer's Part Number

MT40A1G8WE-083EAUT:B
Description

DDR4 DRAM; No. of Terminals: 78; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; Screening Level: AEC-Q100;
Datasheet

Datasheet

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MT40A1G8WE-083EAUT:B Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Standby Current:	.042 Amp
Organization:	1GX8
Output Characteristics:	3-STATE
Maximum Time At Peak Reflow Temperature (s):	30
Maximum Seated Height:	1.2 mm
Access Mode:	MULTI BANK PAGE BURST
Minimum Supply Voltage (Vsup):	1.14 V
Surface Mount:	YES
Maximum Supply Current:	192 mA
Terminal Finish:	Tin/Silver/Copper (Sn/Ag/Cu)
No. of Terminals:	78
Maximum Clock Frequency (fCLK):	1200 MHz
No. of Words:	1073741824 words
Terminal Position:	BOTTOM
Package Style (Meter):	GRID ARRAY, THIN PROFILE, FINE PITCH
Screening Level:	AEC-Q100
Technology:	CMOS
JESD-30 Code:	R-PBGA-B78
Package Shape:	RECTANGULAR
Terminal Form:	BALL
Operating Mode:	SYNCHRONOUS
Maximum Operating Temperature:	125 Cel
Package Code:	TFBGA
Width:	8 mm
Other Names:	MT40A1G8WE-083E AUT:B-ND MT40A1G8WE-083EAUT:B
Input/Output Type:	COMMON
No. of Ports:	1
Memory Density:	8589934592 bit
Self Refresh:	YES
Sequential Burst Length:	8
Memory IC Type:	DDR4 DRAM
JESD-609 Code:	e1
Minimum Operating Temperature:	-40 Cel
Memory Width:	8
No. of Functions:	1
Package Equivalence Code:	BGA78,9X13,32
Refresh Cycles:	8192
Interleaved Burst Length:	8
Length:	12 mm
No. of Words Code:	1G
Nominal Supply Voltage / Vsup (V):	1.2
Additional Features:	AUTO/SELF REFRESH
Peak Reflow Temperature (C):	260
Terminal Pitch:	.8 mm
Maximum Supply Voltage (Vsup):	1.26 V

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