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K4B2G0846D-HCH9

Manufacturer

Samsung
Manufacturer's Part Number

K4B2G0846D-HCH9
Description

DDR3 DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: FBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
Datasheet

Datasheet

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K4B2G0846D-HCH9 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Standby Current:	.012 Amp
Organization:	256MX8
Output Characteristics:	3-STATE
Sub-Category:	DRAMs
Surface Mount:	YES
Maximum Supply Current:	135 mA
No. of Terminals:	78
Maximum Clock Frequency (fCLK):	667 MHz
No. of Words:	268435456 words
Terminal Position:	BOTTOM
Package Style (Meter):	GRID ARRAY, FINE PITCH
Technology:	CMOS
JESD-30 Code:	R-PBGA-B78
Package Shape:	RECTANGULAR
Terminal Form:	BALL
Maximum Operating Temperature:	85 Cel
Package Code:	FBGA
Input/Output Type:	COMMON
Memory Density:	2147483648 bit
Sequential Burst Length:	8
Memory IC Type:	DDR3 DRAM
Minimum Operating Temperature:	0 Cel
Memory Width:	8
Qualification:	Not Qualified
Package Equivalence Code:	BGA78,9X13,32
Refresh Cycles:	8192
Interleaved Burst Length:	8
Maximum Access Time:	.255 ns
No. of Words Code:	256M
Nominal Supply Voltage / Vsup (V):	1.5
Terminal Pitch:	.8 mm
Temperature Grade:	OTHER
Power Supplies (V):	1.5

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