BSZ160N10NS3GATMA1 by Infineon Technologies

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BSZ160N10NS3GATMA1

Manufacturer

Infineon Technologies
Manufacturer's Part Number

BSZ160N10NS3GATMA1
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 63 W; Transistor Element Material: SILICON; Maximum Pulsed Drain Current (IDM): 160 A;
Datasheet

Datasheet

546 In Stock

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BSZ160N10NS3GATMA1 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	40 A
Maximum Pulsed Drain Current (IDM):	160 A
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	8
Maximum Power Dissipation (Abs):	63 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	S-PDSO-N8
No. of Elements:	1
Package Shape:	SQUARE
Terminal Form:	NO LEAD
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.016 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	80 mJ
Other Names:	BSZ160N10NS3 GINTR-ND BSZ160N10NS3 G-ND BSZ160N10NS3 GINDKR-ND BSZ160N10NS3GATMA1CT BSZ160N10NS3 GINCT-ND BSZ160N10NS3G BSZ160N10NS3 GINDKR SP000482390 BSZ160N10NS3 GINTR BSZ160N10NS3 G BSZ160N10NS3GATMA1DKR BSZ160N10NS3GATMA1TR BSZ160N10NS3 GINCT
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	100 V
Qualification:	Not Qualified

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