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NVTFS5116PLTAG
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ManufacturerOnsemi
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Manufacturer's Part NumberNVTFS5116PLTAG
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DescriptionP-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.2 W; No. of Elements: 1; JESD-609 Code: e3;
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Datasheet
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DetailsNVTFS5116PLTAG Technical Details
| TYPE | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Drain Current (ID): | 6 A |
| Maximum Pulsed Drain Current (IDM): | 126 A |
| Sub-Category: | Other Transistors |
| Surface Mount: | YES |
| Terminal Finish: | Matte Tin (Sn) - annealed |
| No. of Terminals: | 5 |
| Maximum Power Dissipation (Abs): | 3.2 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | S-PDSO-F5 |
| No. of Elements: | 1 |
| Package Shape: | SQUARE |
| Terminal Form: | FLAT |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 175 Cel |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | .072 ohm |
| Moisture Sensitivity Level (MSL): | 1 |
| Avalanche Energy Rating (EAS): | 45 mJ |
| Other Names: | NVTFS5116PLTAGOSDKR NVTFS5116PLTAGOSCT NVTFS5116PLTAGOSTR 2156-NVTFS5116PLTAG-OS ONSONSNVTFS5116PLTAG NVTFS5116PLTAG-ND |
| Polarity or Channel Type: | P-CHANNEL |
| JESD-609 Code: | e3 |
| Minimum DS Breakdown Voltage: | 60 V |
| Qualification: | Not Qualified |
| Maximum Drain Current (Abs) (ID): | 14 A |
| Peak Reflow Temperature (C): | NOT SPECIFIED |
