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NVTFS5116PLTAG
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ManufacturerOnsemi
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Manufacturer's Part NumberNVTFS5116PLTAG
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DescriptionP-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.2 W; No. of Elements: 1; JESD-609 Code: e3;
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Datasheet
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DetailsNVTFS5116PLTAG Technical Details
TYPE | DESCRIPTION |
---|---|
Package Body Material: | PLASTIC/EPOXY |
Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Maximum Drain Current (ID): | 6 A |
Maximum Pulsed Drain Current (IDM): | 126 A |
Sub-Category: | Other Transistors |
Surface Mount: | YES |
Terminal Finish: | Matte Tin (Sn) - annealed |
No. of Terminals: | 5 |
Maximum Power Dissipation (Abs): | 3.2 W |
Terminal Position: | DUAL |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | S-PDSO-F5 |
No. of Elements: | 1 |
Package Shape: | SQUARE |
Terminal Form: | FLAT |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 175 Cel |
Case Connection: | DRAIN |
Maximum Drain-Source On Resistance: | .072 ohm |
Moisture Sensitivity Level (MSL): | 1 |
Avalanche Energy Rating (EAS): | 45 mJ |
Polarity or Channel Type: | P-CHANNEL |
JESD-609 Code: | e3 |
Minimum DS Breakdown Voltage: | 60 V |
Qualification: | Not Qualified |
Maximum Drain Current (Abs) (ID): | 14 A |
Peak Reflow Temperature (C): | NOT SPECIFIED |