Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

All prices are in USD

Bulk

QTY	Unit Price	Ext Price
829	Request Pricing	-

BAT14-098

Manufacturer

Infineon Technologies
Manufacturer's Part Number

BAT14-098
Description

MIXER DIODE; Surface Mount: YES; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Frequency: 12 GHz; Maximum Operating Temperature: 150 Cel; JESD-609 Code: e0;
Datasheet

Datasheet

829 In Stock

Popular Products

USB3320C-EZK-TR

Standard Microsystems

INTERFACE CIRCUIT; Temperature Grade: INDUSTRIAL; Terminal Form: NO LEAD; No. of Terminals: 32; Package Code: HVQCCN; Package Shape: SQUARE;

Details

2N7002

Samsung

N-CHANNEL AND P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain-Source On Resistance: 5 ohm; No. of Terminals: 3;

Details

2N2222A

Baneasa S A

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .8 A; Qualification: Not Qualified;

Details

LM7805CT

Silicon Group

Other Regulators; No. of Terminals: 3; Maximum Input Voltage Absolute: 35 V; Maximum Voltage Tolerance: 5 %; Package Body Material: PLASTIC/EPOXY; Maximum Load Regulation: .05 %;

Details

LD1117S33CTR

STMicroelectronics

STMicroelectronics LD1117S33CTR is a fixed positive single output LDO regulator with a nominal output voltage of 3.3V and max output current of 1.3A. It operates within an input voltage range of 4.75V to 15V, making it suitable for various applications requiring stable voltage regulation in compact designs. The device features low dropout voltage of 1.3V, high temperature operation up to 125°C, and small outline package style for space-constrained PCB layouts.

Details

FDD5614P

Onsemi

FDD5614P by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 45A IDM and 0.1 ohm RDS(ON), operating in ENHANCEMENT MODE at up to 175°C. The PLASTIC/EPOXY package with GULL WING terminals ensures efficient heat dissipation and reliable performance.

Details

LL4148

Shanghai Lunsure Electronic Technology

RECTIFIER DIODE; Surface Mount: YES; Maximum Forward Voltage (VF): 1 V; Maximum Non Repetitive Peak Forward Current: .5 A; No. of Elements: 1; Maximum Reverse Recovery Time: .004 us;

Details

LL4148

International Semiconductor

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

2N2222A

Philips Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

SMBJ18CA

Bytesonic Electronics

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

1554216004

Molex

WIRE AND CABLE;

Details

NDT2955

Onsemi

NDT2955 by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 15A and EAS of 174mJ, suitable for ENHANCEMENT MODE operation. With a compact SMALL OUTLINE package and -55 to 150 °C operating range, it offers efficient power dissipation up to 3W.

Details

CRCW080510R0FKEA

Vishay Intertechnology

Vishay Intertechnology's CRCW080510R0FKEA is a fixed resistor with 10 ohm resistance, 1% tolerance, and 0.125 W power dissipation. Ideal for surface mount applications in automotive electronics due to its AEC-Q200 reference standard and operating voltage of 150 V. Operating temperature range from -55 to 155 °C ensures reliability in various environments.

Details

2N2222A

International Devices

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

1N4148

Laube Technology

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

NDT2955

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; Package Style (Meter): SMALL OUTLINE; Maximum Drain Current (Abs) (ID): 2.5 A;

Details

LM107H

Linear Technology

LM107H by Linear Technology is an Operational Amplifier with a max input offset voltage of 3000uV, common mode reject ratio of 96dB, and min voltage gain of 50000. It is used in military applications due to its MILITARY temperature grade and BIPOLAR technology for precise signal processing in harsh environments.

Details

LL4148-GS08

Vishay Intertechnology

The Vishay Intertechnology LL4148-GS08 is a glass diode with fast recovery time of 0.008 us and max reverse current of 5 uA. Ideal for applications requiring rectification, it has a breakdown voltage of 100 V and can handle a peak forward current of 2 A.

Details

LAN8720A-CP-TR

Standard Microsystems

ETHERNET TRANSCEIVER; Temperature Grade: OTHER; Terminal Form: NO LEAD; No. of Terminals: 24; Package Code: HVQCCN; Package Shape: SQUARE;

Details

1N4148

Shenzhen Yixinsemi Electronics

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

BAT14-098 Technical Details

TYPE	DESCRIPTION
Diode Element Material:	SILICON
Diode Type:	MIXER DIODE
Maximum Operating Temperature:	150 Cel
Maximum Operating Frequency:	12 GHz
Sub-Category:	Microwave Mixer Diodes
Surface Mount:	YES
Terminal Finish:	Tin/Lead (Sn/Pb)
JESD-609 Code:	e0

Category Top Products

TGD0623XSMX

Texas Instruments

TGD0623XSMX by Texas Instruments is a single microwave mixer diode with Schottky technology. It operates in the very high frequency to millimeter wave band, suitable for applications requiring isolated case connection. This surface-mount diode has a ceramic, metal-sealed co-fired package body and wrap-around terminal form.

BAT17-07

Infineon Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 4; Surface Mount: YES; Package Shape: RECTANGULAR;

HSMS-2812-TR1G

Broadcom

HSMS-2812-TR1G by Broadcom is a Schottky mixer diode with 2 elements, 2 pF diode capacitance, and 0.41 V max forward voltage. It is ideal for microwave applications due to its series connected configuration, small outline package style, and peak reflow temperature of 260°C.

BAT15-099LRH

Infineon Technologies

MIXER DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 4; Surface Mount: YES; Package Shape: RECTANGULAR;

PMBD354,215

NXP Semiconductors

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

SMS7630-005LF

Skyworks Solutions

Skyworks Solutions SMS7630-005LF is a Schottky mixer diode with 2 elements, X Band frequency band, and 0.3 pF diode capacitance. It is ideal for microwave applications requiring small outline package style and surface mount capability at up to 150°C operating temperature.

BA582E6433

Infineon Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

HSMS-2812G

Agilent Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

DB5S310K0R

ROHM

MIXER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 5; Surface Mount: YES; Package Shape: RECTANGULAR;

SMMBD330T1G

Onsemi

SMMBD330T1G by Onsemi is a Schottky mixer diode with a max forward voltage of 0.45V and max output current of 0.2A. It operates at temperatures up to 125 °C, making it suitable for microwave applications requiring high-speed signal detection and mixing capabilities.

BAT15-098LRH

Infineon Technologies

MIXER DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 4; Surface Mount: YES; Package Shape: RECTANGULAR;

PMBD352212

NXP Semiconductors

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

1PS79SB17,115

Nexperia

MIXER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

BAT15-03WL6327

Infineon Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

HSMS-2852#T30

Hewlett Packard

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

TMM6263FILM

STMicroelectronics

TMM6263FILM by STMicroelectronics is a single microwave mixer diode with a Schottky technology. It operates in the very high frequency to ultra high frequency band, featuring a max forward voltage of 1V and max output current of 15A. This glass-packaged diode is ideal for applications requiring high-frequency signal mixing and detection.

PMBD353,215

Nexperia

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

BAT14-063S

Infineon Technologies

MIXER DIODE; Surface Mount: YES; Maximum Operating Temperature: 150 Cel; Diode Element Material: SILICON; Maximum Noise Figure: 6.5 dB;

MBD301

Motorola

MIXER DIODE; Terminal Position: BOTTOM; Terminal Form: THROUGH-HOLE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

MMSD301T1G

Onsemi

MMSD301T1G by Onsemi is a single microwave mixer & detector diode with very high to ultra high frequency range. It has a max diode capacitance of 1.5 pF and operates b/w -55°C to 125°C. Ideal for efficiency applications, it features a Schottky technology with a max forward voltage of 0.6V and peak output current of 0.2A.