Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

All prices are in USD

Bulk

QTY	Unit Price	Ext Price
177	Request Pricing	-

HSMS-282C-BLKG

Manufacturer

Broadcom
Manufacturer's Part Number

HSMS-282C-BLKG
Description

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
Datasheet

Datasheet

177 In Stock

Popular Products

SS14

General Semiconductor

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

OPA2227UA

Texas Instruments

OPA2227UA by Texas Instruments is a dual operational amplifier with low-offset voltage of 200 uV and bias current of 0.01 uA. It operates at temperatures ranging from -40 to 85 °C, making it suitable for industrial applications requiring precise signal amplification. With a unity gain bandwidth of 8000 kHz, this op amp is ideal for high-frequency circuit designs.

Details

LM7805CT

Silicon Group

Other Regulators; No. of Terminals: 3; Maximum Input Voltage Absolute: 35 V; Maximum Voltage Tolerance: 5 %; Package Body Material: PLASTIC/EPOXY; Maximum Load Regulation: .05 %;

Details

2N2222A

Motorola

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; Maximum Collector-Base Capacitance: 8 pF;

Details

LM358AN

Onsemi

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;

Details

2N7002

Silicon Standard

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .225 W; Maximum Drain-Source On Resistance: 7.5 ohm; Transistor Element Material: SILICON;

Details

FDLL4148

Fairchild Semiconductor

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

LL4148

Excel (Suzhou) Semiconductor

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

INA826AIDGKR

Texas Instruments

INA826AIDGKR by Texas Instruments is an instrumentation amplifier with 150uV max input offset voltage, 0.095uA max average bias current, and 1MHz nominal bandwidth. Ideal for automotive applications due to its -40 to 125 °C operating temperature range and high common mode rejection ratio of 120dB.

Details

CDSOT23-SM712

Bourns

Bourns CDSOT23-SM712 is a bidirectional Transient Voltage Suppressor diode with 400W peak power dissipation and 20uA reverse current. Ideal for surge protection in applications requiring a max clamping voltage of 14V, such as IEC-61000-4-2 compliant systems. Operates b/w -55°C to 150°C with matte tin finish and Gull Wing terminals.

Details

M39029/56-351

Defense Logistics Agency

CONNECTOR ACCESSORY; MIL Conformity: YES; Contact Gender: FEMALE; Mating Contacts: M39029/58-363; Removal Tool Sources: MILITARY; Alternate Contact Sources: MILITARY;

Details

LL4148

Bkc Semiconductors

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

LM555CM

National Semiconductor

PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;

Details

BAV99

Motorola

RECTIFIER DIODE; Surface Mount: YES; Maximum Output Current: .1 A; Maximum Reverse Recovery Time: .006 us; Maximum Repetitive Peak Reverse Voltage: 70 V; JESD-609 Code: e0;

Details

LM358MX

Fairchild Semiconductor

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;

Details

2N7002

STMicroelectronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Drain Current (ID): .2 A; Transistor Application: SWITCHING;

Details

B340A-13-F

Diodes Incorporated

B340A-13-F by Diodes Inc. is a Schottky rectifier diode with 40V reverse test voltage, 3A max output current, and 0.5V max forward voltage. It is used for efficiency applications in electronics due to its small outline package and high operating temperature range of -55°C to 150°C.

Details

1N4148WS

Taiwan Semiconductor

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

USB3320C-EZK-TR

Standard Microsystems

INTERFACE CIRCUIT; Temperature Grade: INDUSTRIAL; Terminal Form: NO LEAD; No. of Terminals: 32; Package Code: HVQCCN; Package Shape: SQUARE;

Details

C1005X7R1E103K050BB

TDK

The TDK C1005X7R1E103K050BB is a ceramic capacitor with capacitance of 0.01uF and rated DC voltage of 25V. It features X7R temperature characteristics, -55 to 125°C operating range, and ±10% tolerance. Ideal for surface mount applications requiring compact size and stable performance in various electronic circuits.

Details

HSMS-282C-BLKG Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	20
Maximum Forward Voltage (VF):	.34 V
Config:	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode Type:	MIXER DIODE
Frequency Band:	C BAND
Sub-Category:	Rectifier Diodes
Surface Mount:	YES
Terminal Finish:	MATTE TIN
No. of Terminals:	3
Terminal Position:	DUAL
Maximum Diode Capacitance:	1 pF
Package Style (Meter):	SMALL OUTLINE
Technology:	SCHOTTKY
JESD-30 Code:	R-PDSO-G3
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Maximum Operating Temperature:	150 Cel
Moisture Sensitivity Level (MSL):	1
Maximum Repetitive Peak Reverse Voltage:	15 V
JESD-609 Code:	e3
Diode Element Material:	SILICON
Qualification:	Not Qualified
Peak Reflow Temperature (C):	260

Category Top Products

BAT15-044S

Infineon Technologies

MIXER DIODE; Surface Mount: YES; Maximum Operating Temperature: 150 Cel; Maximum Noise Figure: 5.5 dB; Diode Element Material: SILICON;

BAT14-099R

Infineon Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 4; Surface Mount: YES; Package Shape: RECTANGULAR;

BA592

NXP Semiconductors

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

NSR15DW1T1G

Onsemi

NSR15DW1T1G by Onsemi is a Schottky mixer diode with 2 elements, max. reverse voltage of 15V, and VF of 0.415V. It operates b/w -65 to 150 °C and has a package style of small outline for microwave applications.

BAT14-112R

Infineon Technologies

MIXER DIODE; Surface Mount: YES; Maximum Forward Voltage (VF): .44 V; Maximum Operating Temperature: 150 Cel; Minimum Operating Temperature: -55 Cel;

1PS70SB86

NXP Semiconductors

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

HSMS-2808-TR1G

Broadcom

HSMS-2808-TR1G by Broadcom is a Schottky mixer diode with 4 elements, 2 pF capacitance, and 70V peak reverse voltage. It comes in a small outline package for surface mount applications at up to 150°C. Ideal for microwave mixing and detection due to its high performance and reliability.

BAR10-AR2

STMicroelectronics

STMicroelectronics' BAR10-AR2 is a single-config microwave mixer diode with Schottky technology. Operating from -65 °C to 200°C, it has a max capacitance of 1.2 pF and covers very high to ultra-high frequencies. Ideal for applications requiring isolated case connection in GLASS package.

BAT15-090D

Infineon Technologies

MIXER DIODE; Terminal Position: UNSPECIFIED; Terminal Form: FLAT; No. of Terminals: 3; Surface Mount: YES; Package Shape: UNSPECIFIED;

BA892H6327

Infineon Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

HSMS-2855-BLKG

Broadcom

HSMS-2855-BLKG by Broadcom is a Schottky mixer diode with 2 elements, operating from 0.915 GHz to 4 GHz in L Band. It features a small outline package, surface mountable with nickel palladium gold finish. Ideal for microwave applications requiring high frequency mixing and detection.

BAT17-05

Infineon Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

BAT29-AZX

STMicroelectronics

BAT29-AZX by STMicroelectronics is a single Schottky mixer diode with ultra-high frequency band. It features a max forward voltage of 0.55V, noise figure of 7dB, and operating temperature up to 125 °C. Ideal for microwave applications requiring low noise and high-frequency performance.

HSMS-2800-TR1G

Broadcom

HSMS-2800-TR1G by Broadcom is a Schottky mixer diode with 2 pF capacitance, 0.41 V forward voltage, and 70 V peak reverse voltage. It is designed for microwave applications, featuring a small outline package and nickel palladium gold terminal finish for surface mount configurations. Operating up to 150°C, it offers high performance in various electronic systems.

HSMS-2800-TR1G

Agilent Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

BAT15-04R-E6327

Infineon Technologies

MIXER DIODE; Surface Mount: YES; Diode Element Material: SILICON; Maximum Operating Frequency: 12 GHz; Moisture Sensitivity Level (MSL): 1; Maximum Operating Temperature: 150 Cel;

BAT15-123H

Infineon Technologies

MIXER DIODE; Terminal Position: END; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

BAT1502LRHE6327XTSA1

Infineon Technologies

BAT1502LRHE6327XTSA1 by Infineon Technologies is a Schottky mixer diode with 0.35 pF capacitance, suitable for X Band applications. It operates at 150°C max temperature, has a power dissipation of 0.1 W, and features a low barrier Schottky element in a chip carrier package.

BAT15-099RE6433

Infineon Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 4; Surface Mount: YES; Package Shape: RECTANGULAR;

1SS295-TE85L(F)

Toshiba

Toshiba's 1SS295-TE85L(F) is a Schottky mixer diode with ultra-high frequency band, 0.9 pF capacitance, and 0.32 V forward voltage. Ideal for microwave applications due to its dual-element design and small outline package style.