Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

All prices are in USD

Bulk

QTY	Unit Price	Ext Price
26	Request Pricing	-

BAT14-112R

Manufacturer

Infineon Technologies
Manufacturer's Part Number

BAT14-112R
Description

MIXER DIODE; Surface Mount: YES; Maximum Forward Voltage (VF): .44 V; Maximum Operating Temperature: 150 Cel; Minimum Operating Temperature: -55 Cel;
Datasheet

Datasheet

26 In Stock

Popular Products

AB26TRB-32.768KHZ--T

Abracon

AB26TRB-32.768KHZ--T by Abracon is a crystal oscillator with 20 ppm frequency tolerance, 126% stability, and 35000 ohm series resistance. Ideal for applications requiring 0.032768 MHz nominal frequency in surface mount configurations.

Details

LM317T

Sgs-ates Componenti Electronici S P A

Other Regulators; No. of Terminals: 3; JESD-609 Code: e0; Terminal Position: SINGLE; Adjustability: ADJUSTABLE; Maximum Load Regulation (%): 1.5 %;

Details

2N7002

Siliconix

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain Current (ID): .115 A; Operating Mode: ENHANCEMENT MODE;

Details

LM555CMX

Texas Instruments

LM555CMX by Texas Instruments is an Analog Waveform Generation IC with 8 terminals. It operates at a nominal voltage of 5V and supports power supplies ranging from 5V to 15V. This versatile IC, housed in a small outline package, is commonly used for pulse and rectangular waveform generation in commercial temperature environments.

Details

BSS84-7-F

SPC TECHNOLOGY/ MULTICOMP

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Package Shape: RECTANGULAR; Transistor Element Material: SILICON;

Details

LM7805CT

Silicon Group

Other Regulators; No. of Terminals: 3; Maximum Input Voltage Absolute: 35 V; Maximum Voltage Tolerance: 5 %; Package Body Material: PLASTIC/EPOXY; Maximum Load Regulation: .05 %;

Details

BSS138

Taitron Components

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: 3.5 ohm; Maximum Drain Current (ID): .2 A; Peak Reflow Temperature (C): NOT SPECIFIED;

Details

1N4148

North American Philips Discrete Products Div

RECTIFIER DIODE; Surface Mount: NO; Maximum Forward Voltage (VF): 1 V; JESD-609 Code: e0; Maximum Repetitive Peak Reverse Voltage: 100 V; Terminal Finish: Tin/Lead (Sn/Pb);

Details

RC0603FR-0710KL

Yageo

Yageo's RC0603FR-0710KL is a fixed resistor with 10000 ohm resistance, 1% tolerance, and 0.1 W power dissipation. It operates b/w -55 to 155 °C and is ideal for surface mount applications in electronics requiring precise resistance values.

Details

1N4148

Dc Components

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

1N4148

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

SBAV99LT1G

Onsemi

SBAV99LT1G by Onsemi is a rectifier diode with a max repetitive peak reverse voltage of 100V. It has a small outline package style and a fast max reverse recovery time of 0.006 us. It is commonly used in applications requiring low power dissipation and high operating temperatures.

Details

1552200253

Molex

WIRE AND CABLE;

Details

FDD5614P

Onsemi

FDD5614P by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 45A IDM and 0.1 ohm RDS(ON), operating in ENHANCEMENT MODE at up to 175°C. The PLASTIC/EPOXY package with GULL WING terminals ensures efficient heat dissipation and reliable performance.

Details

LM7805CT

Onsemi

FIXED POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Package Code: TO-220; Terminal Form: THROUGH-HOLE; Maximum Input Voltage Absolute: 35 V; Maximum Voltage Tolerance: 5 %;

Details

2N7002

Sipex

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Peak Reflow Temperature (C): 240; Terminal Finish: TIN LEAD;

Details

NE555D

Philips Semiconductors

Analog Waveform Generation Functions; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;

Details

BSS138

Vishay Intertechnology

Vishay Intertechnology's BSS138 is a N-CHANNEL FET with SINGLE configuration and ENHANCEMENT MODE operation. It features 0.35W power dissipation, METAL-OXIDE SEMICONDUCTOR tech, and 150°C max temp. Ideal for surface mount applications in various electronic circuits requiring efficient power management.

Details

2N7002

Nte Electronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Maximum Drain Current (ID): .115 A; No. of Terminals: 3;

Details

1N4148WS

Sinyork

RECTIFIER DIODE; Surface Mount: YES; Maximum Forward Voltage (VF): 1 V; No. of Elements: 1; Maximum Output Current: .2 A; Config: SINGLE;

Details

BAT14-112R Technical Details

TYPE	DESCRIPTION
Maximum Forward Voltage (VF):	.44 V
Diode Type:	MIXER DIODE
Maximum Operating Temperature:	150 Cel
Sub-Category:	Other Diodes
Surface Mount:	YES
Minimum Operating Temperature:	-55 Cel

Category Top Products

BAT15-114H

Infineon Technologies

MIXER DIODE; Terminal Position: UNSPECIFIED; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

HSMS-2822G

Broadcom

Broadcom's HSMS-2822G is a Schottky mixer diode with 2 elements, series connected in a small outline package. It has a max operating temperature of 150°C and can handle up to 0.25W of pulsed input power. Ideal for microwave applications requiring low diode capacitance and high performance in a surface-mount configuration.

BAT15-07LRHE6327

Infineon Technologies

MIXER DIODE; Surface Mount: YES; Maximum Operating Temperature: 150 Cel; Technology: SCHOTTKY; Schottky Barrier Type: LOW BARRIER; Maximum Output Current: .11 A;

5082-2835

Broadcom

Broadcom's 5082-2835 is a single mixer diode with Schottky technology. It operates in the ultra high frequency band, with a max forward voltage of 0.34V and max output current of 0.01A. Ideal for microwave applications due to its glass package body material and isolated case connection.

BAT14-094S

Infineon Technologies

MIXER DIODE; Surface Mount: YES; Maximum Operating Temperature: 150 Cel; Maximum Noise Figure: 6.5 dB; Diode Element Material: SILICON;

MDX655

Texas Instruments

The Texas Instruments MDX655 is a surface-mount microwave mixer diode with a frequency range of 25-40 GHz. It has an impedance range of 50-200 ohm and operates up to 100°C. Ideal for high-frequency applications requiring gallium arsenide diode technology.

BAT14-099RE6433

Infineon Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 4; Surface Mount: YES; Package Shape: RECTANGULAR;

BAT62-03W

Siemens

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

BAT15-050D

Infineon Technologies

MIXER DIODE; Terminal Position: UNSPECIFIED; Terminal Form: FLAT; No. of Terminals: 3; Surface Mount: YES; Package Shape: UNSPECIFIED;

BAT15-104

Infineon Technologies

MIXER DIODE; Terminal Position: UNSPECIFIED; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

1PS79SB17,115

NXP Semiconductors

1PS79SB17,115 by NXP Semiconductors is a single Schottky mixer diode with a max forward voltage of 0.35V and a max repetitive peak reverse voltage of 4V. It has a diode capacitance of 1pF, operates at temperatures up to 150°C, and is suitable for microwave applications requiring high-frequency signal mixing and detection.

HSMS-2829-BLKG

Broadcom

HSMS-2829-BLKG by Broadcom is a Schottky mixer diode with 4 elements in C band. It has a max forward voltage of 0.34V and operates b/w -65 to 150 °C. Ideal for microwave applications, it features a crossover ring config and surface mount package style.

BA482

NXP Semiconductors

MIXER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

BA482143

NXP Semiconductors

MIXER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

PMBD352215

NXP Semiconductors

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

CA3019

Onsemi

CA3019 by Onsemi is a COMPLEX microwave mixer & detector diode with 10 terminals. It features 6 SILICON diode elements and a max power dissipation of 0.12 W. Ideal for RF applications, radar systems, and signal processing due to its high-performance MIXER DIODE technology.

5082-2835#T25

Broadcom

Broadcom's 5082-2835#T25 is a Schottky mixer diode with 1 pF capacitance, ideal for ultra high frequency applications. It features a glass package, single configuration, and tin lead terminal finish. The diode element material is silicon, with an isolated case connection and round package shape.

DB3X314K0L

ROHM

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

BAT15099RE6327HTSA1

Infineon Technologies

Infineon's BAT15099RE6327HTSA1 is a Schottky mixer diode with 4 elements, suitable for X Band applications. It features low barrier Schottky technology, 0.5 pF diode capacitance, and operates b/w -55 to 150 °C. This small outline package has a max power dissipation of 0.1 W and tin terminal finish.

DB3X313N0L

ROHM

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;