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BA481136

Manufacturer

NXP Semiconductors
Manufacturer's Part Number

BA481136
Description

MIXER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
Datasheet

Datasheet

2842 In Stock

Popular Products

MMBF170LT1G

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N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Package Style (Meter): SMALL OUTLINE; No. of Terminals: 3;

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LM358N

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AMS1117-3.3

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LM317T

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DS18B20+

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2N7002

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Details

SS14

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RECTIFIER DIODE; Surface Mount: YES; No. of Phases: 1; Maximum Operating Temperature: 125 Cel; No. of Elements: 1; Maximum Non Repetitive Peak Forward Current: 30 A;

Details

LM555CN

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Details

2N2222A

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Details

1N4148

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RECTIFIER DIODE; Surface Mount: NO; Maximum Operating Temperature: 175 Cel; Maximum Reverse Recovery Time: .004 us; Maximum Non Repetitive Peak Forward Current: .5 A; Maximum Forward Voltage (VF): 1 V;

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LM555CM

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LM107H

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BAV99

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RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

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1N4148

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RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

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MMBF170LT1G

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MMBF170LT1G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage and 0.5A Drain Current. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 0.225W. This small outline transistor has a temperature range from -55 to 150 °C.

Details

MMBT3904-7-F

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Diodes Inc. MMBT3904-7-F is a NPN BJT transistor for switching applications. Features include VCEsat of 0.3V, hFE of 30, and IC of 0.2A. With a max operating temp of 150°C, it's ideal for small outline SMT designs in automotive electronics.

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BAV99

Panjit International

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

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SMBJ18CA

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SMBJ18CA

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LM358AN

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BA481136 Technical Details

TYPE	DESCRIPTION
Package Body Material:	GLASS
Maximum Forward Voltage (VF):	.6 V
Config:	SINGLE
Diode Type:	MIXER DIODE
Frequency Band:	ULTRA HIGH FREQUENCY
Maximum Noise Figure:	8 dB
Maximum Output Current:	30 A
JEDEC-95 Code:	DO-34
Surface Mount:	NO
Maximum Reverse Current:	10 uA
Diode Element Material:	SILICON
No. of Terminals:	2
Qualification:	Not Qualified
Terminal Position:	AXIAL
Maximum Diode Capacitance:	1.1 pF
Package Style (Meter):	LONG FORM
JESD-30 Code:	O-LALF-W2
Minimum Breakdown Voltage:	4 V
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	WIRE
Maximum Operating Temperature:	100 Cel
Case Connection:	ISOLATED

Category Top Products

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STMicroelectronics BAT29-B2 is a single Schottky mixer diode with 1 pF capacitance and 0.05 uA reverse current. Operating at ultra-high frequency, it has a max forward voltage of 0.55 V and 7 dB noise figure. Ideal for microwave applications due to its high breakdown voltage of 5 V and max output current of 30 A.

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BA481143

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BA591,115 by NXP Semiconductors is a single microwave mixer diode with very high frequency band. It has a max power dissipation of 0.5W and operates b/w -65°C to 150°C. This small outline diode is ideal for applications requiring high-frequency signal mixing in electronic circuits.