Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

All prices are in USD

Bulk

QTY	Unit Price	Ext Price
3,485	$0.058	$201.956

BAT17,215

Manufacturer

NXP Semiconductors
Manufacturer's Part Number

BAT17,215
Description

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
Datasheet

Datasheet

3485 In Stock

Popular Products

BAV99

Weitron Technology

RECTIFIER DIODE; Surface Mount: YES; Maximum Operating Temperature: 150 Cel; Maximum Output Current: .215 A; JESD-609 Code: e0; Maximum Forward Voltage (VF): .715 V;

Details

TCA6424ARGJR

Texas Instruments

TCA6424ARGJR by Texas Instruments is a CMOS parallel I/O port with 24 bits and 3 ports. It operates b/w -40 to 85°C, suitable for industrial applications. With a max clock frequency of 0.4 MHz, it offers low power consumption at only 0.03 mA supply current.

Details

BSS123,215

Nexperia

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 1; No. of Terminals: 3; Maximum Time At Peak Reflow Temperature (s): 30;

Details

LL4148

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

1N4148

Vishay Intertechnology

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

BSS138

Inter F E T

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Terminal Finish: TIN LEAD; Package Body Material: PLASTIC/EPOXY;

Details

BAV99

ROHM

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

C0603C104K5RACAUTO

KEMET Corporation

KEMET C0603C104K5RACAUTO is a ceramic capacitor with 0.1uF capacitance, rated for 50V. It has X7R temperature characteristics, -55 to 125°C operating range, and ±10% tolerance. Ideal for automotive applications meeting AEC-Q200 standard, it comes in SMT package with matte tin finish and wraparound terminals.

Details

BAV99

MICRODIODE ELECTRONICS SHENZHEN CO LTD

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

1N4148

Sangdest Microelectronics (Nanjing)

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

BSS123NH6327XTSA1

Infineon Technologies

Infineon BSS123NH6327XTSA1 is a N-CHANNEL FET with 100V DS breakdown voltage, 0.19A ID, and 6 ohm RDS(on). Ideal for small outline applications requiring high drain current and low on-resistance. AEC-Q101 compliant for automotive use.

Details

1N4148WT

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

2N7002

Telcom Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Operating Temperature: 150 Cel; JESD-609 Code: e0;

Details

FDN306P

Onsemi

FDN306P by Onsemi is a P-CHANNEL FET with 12V DS Breakdown Voltage, ideal for SWITCHING applications. It features SINGLE configuration with BUILT-IN DIODE and GULL WING terminals. Operating in ENHANCEMENT MODE, it has a max ID of 2.6A and 0.04 ohm RDS(on), suitable for small outline packages at temperatures ranging from -55 to 150°C.

Details

2N2222A

SPC TECHNOLOGY/ MULTICOMP

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

1N4148

Temic Semiconductors

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

2N2222A

Continental Device India

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

2N2222A

Ksl Microdevices

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

L7805CV

STMicroelectronics

L7805CV by STMicroelectronics is a fixed positive single output standard regulator with an output voltage of 5V and max current of 1.5A. It operates in temperatures ranging from 0 to 125°C, making it suitable for various applications requiring stable voltage regulation in electronic circuits.

Details

STM32H743BIT6

STMicroelectronics

STM32H743BIT6 by STMicroelectronics is a 32-bit microcontroller with Cortex-M7 CPU, 208 terminals, and 1085440 bytes of RAM. It features 2 DAC channels, 32 ADC channels, and operates at a max clock frequency of 48 MHz. Ideal for industrial applications requiring high-speed processing and extensive peripheral connectivity.

Details

BAT17,215 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Maximum Forward Voltage (VF):	.6 V
Config:	SINGLE
Diode Type:	MIXER DIODE
Frequency Band:	ULTRA HIGH FREQUENCY
Maximum Output Current:	30 A
Sub-Category:	Microwave Mixer Diodes
Surface Mount:	YES
Terminal Finish:	TIN
Maximum Reverse Current:	.25 uA
No. of Terminals:	3
Terminal Position:	DUAL
Maximum Diode Capacitance:	1 pF
Package Style (Meter):	SMALL OUTLINE
Technology:	SCHOTTKY
JESD-30 Code:	R-PDSO-G3
Minimum Breakdown Voltage:	4 V
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Maximum Operating Temperature:	100 Cel
Moisture Sensitivity Level (MSL):	1
Maximum Noise Figure:	8 dB
JESD-609 Code:	e3
Diode Element Material:	SILICON
Qualification:	Not Qualified
Peak Reflow Temperature (C):	260

Category Top Products

BAV70

Panasonic

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

BAT62-08S

Infineon Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 6; Surface Mount: YES; Package Shape: RECTANGULAR;

BAT15-123ES

Infineon Technologies

MIXER DIODE; Terminal Position: END; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

HSMS-286K-BLKG

Broadcom

HSMS-286K-BLKG by Broadcom is a Schottky mixer diode with 2 elements, operating in C band. It has a max forward voltage of 0.35V and can withstand temperatures from -65 to 150°C. Ideal for microwave applications requiring high frequency performance in a small outline package.

NSVMMBD353LT1G

Onsemi

NSVMMBD353LT1G by Onsemi is a surface mount microwave mixer & detector diode with max operating temperature of 150 °C. It features matte tin terminal finish and silicon diode element material. Ideal for applications requiring high temperature resistance and efficient signal mixing in electronic circuits.

MMBD353

Onsemi

The Onsemi MMBD353 is a Schottky mixer diode with 1 pF capacitance, suitable for ultra high frequency applications. It comes in a small outline package with gull wing terminals and is surface mountable. This diode has two elements made of silicon, making it ideal for microwave mixing and detecting purposes.

MMBD353LT3G

Onsemi

MMBD353LT3G by Onsemi is a microwave mixer & detector diode with 2 elements in series connected configuration. Operating at ultra high frequency, it has a max power dissipation of 0.225W and can handle temperatures up to 125 °C. Ideal for applications requiring small outline surface mount diodes in high-frequency circuits.

BAT15-123P

Infineon Technologies

MIXER DIODE; Terminal Position: END; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

BAT17-04W

Infineon Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

BAT1502LRHE6327XTSA1

Infineon Technologies

BAT1502LRHE6327XTSA1 by Infineon Technologies is a Schottky mixer diode with 0.35 pF capacitance, suitable for X Band applications. It operates at 150°C max temperature, has a power dissipation of 0.1 W, and features a low barrier Schottky element in a chip carrier package.

HSMS-281L-BLKG

Broadcom

Broadcom's HSMS-281L-BLKG is a Schottky mixer diode with 3 elements, 2 pF capacitance, and 0.2 uA reverse current. It operates b/w -65 to 150 °C and has a peak reflow temp of 260 C. Ideal for microwave applications due to its small outline package and high performance in signal detection.

BAT14-074S

Infineon Technologies

MIXER DIODE; Surface Mount: YES; Maximum Noise Figure: 5.5 dB; Maximum Operating Temperature: 150 Cel; Diode Element Material: SILICON;

BAT15-014H

Infineon Technologies

MIXER DIODE; Terminal Position: UNSPECIFIED; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

BAT68-05E6433

Infineon Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

DB2J314

Panasonic

Panasonic's DB2J314 is a single-config microwave mixer diode with Schottky technology. Operating at 125°C, it has a max forward voltage of 0.4V and output current of 0.03A, suitable for L Band applications in surface-mount setups due to its small outline package style.

TMMBAR28

STMicroelectronics

TMMBAR28 by STMicroelectronics is a single microwave mixer diode with Schottky technology. It operates in the very high frequency to ultra high frequency band, with a max forward voltage of 0.41V and max output current of 0.015A. This glass-packaged diode is suitable for applications requiring high-frequency signal mixing and detection.

BAT68E6327HTSA1

Infineon Technologies

BAT68E6327HTSA1 by Infineon Technologies is a single Schottky mixer diode with a max power dissipation of 0.15W. It operates in the very high frequency to ultra high frequency band and has a max diode capacitance of 1pF. This small outline package diode is ideal for microwave mixing and detection applications.

1N5712-AR2

STMicroelectronics

1N5712-AR2 by STMicroelectronics is a Schottky mixer diode with 1.2 pF capacitance, operating from -65 to 200 °C. Ideal for VHF to UHF applications due to its isolated case connection and single configuration in a glass package. With a max power dissipation of 0.43 W, it offers reliable performance in high-frequency circuits.

MMBD301LT1

Leshan Radio

MIXER DIODE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Operating Temperature: 125 Cel;

1PS88SB82,165

NXP Semiconductors

1PS88SB82,165 by NXP Semiconductors is a Schottky mixer diode with 3 elements and ultra-high frequency band. It operates b/w -65 to 125 °C and has a max reverse current of 0.2 uA. This microwave diode is suitable for applications requiring high-frequency signal mixing in electronic circuits.