Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

All prices are in USD

Bulk

QTY	Unit Price	Ext Price
848	Request Pricing	-

BAT15-074S

Manufacturer

Infineon Technologies
Manufacturer's Part Number

BAT15-074S
Description

MIXER DIODE; Surface Mount: YES; Maximum Noise Figure: 5.5 dB; Maximum Operating Temperature: 150 Cel; Diode Element Material: SILICON;
Datasheet

Datasheet

848 In Stock

Popular Products

1N4148

Panjit International

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

1N4148WT

Diotec Semiconductor Ag

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

LL4148

Promax-johnton

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

FDN306P

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Maximum Drain Current (Abs) (ID): 2.6 A; Operating Mode: ENHANCEMENT MODE;

Details

43025-0400

Molex

The Molex 43025-0400 is a board connector with 4 contacts, 2 rows, and a mating contact pitch of 0.118". It has a body length of 0.27", insulation resistance of 1Gohm, and operates b/w -40 to 105°C. Ideal for commercial applications requiring a female connector with crimp termination and UL94V-0 flammability rating.

Details

BSS138

Good-ark Electronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: 6 ohm; Minimum DS Breakdown Voltage: 50 V; Operating Mode: ENHANCEMENT MODE;

Details

STM32F401CDY6TR

STMicroelectronics

STM32F401CDY6TR by STMicroelectronics is a 32-bit microcontroller with 393216 ROM words, 50 MHz clock frequency, and 36 I/O lines. It is used in applications requiring high-speed processing, such as industrial automation and consumer electronics.

Details

OPA2227UA

Texas Instruments

OPA2227UA by Texas Instruments is a dual operational amplifier with low-offset voltage of 200 uV and bias current of 0.01 uA. It operates at temperatures ranging from -40 to 85 °C, making it suitable for industrial applications requiring precise signal amplification. With a unity gain bandwidth of 8000 kHz, this op amp is ideal for high-frequency circuit designs.

Details

2N2222A

Semitronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

LL4148

Bkc Semiconductors

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

DS18B20Z

Maxim Integrated

DS18B20Z by Maxim Integrated is a 12-bit digital temperature sensor with 1-Wire interface. It operates b/w -55 to 125°C, with ±0.5°C accuracy. Suitable for applications requiring precise temperature monitoring in compact spaces.

Details

BAV99

ROHM

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

2N7002

General Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JEDEC-95 Code: TO-236AB; Qualification: Not Qualified; Package Style (Meter): SMALL OUTLINE;

Details

2N2222A

Gec Plessey Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

SMBJ18CA

Concord Semiconductor

TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 18 V; Nominal Breakdown Voltage: 21.05 V; Polarity: BIDIRECTIONAL; Maximum Clamping Voltage: 29.2 V;

Details

2N7002

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Terminal Form: GULL WING; JESD-30 Code: R-PDSO-G3;

Details

LL4148

Kec

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

AT90CAN128-16AUR

Microchip Technology

AT90CAN128-16AUR by Microchip: 16 MHz clock, 8-bit data RAM, and 131072 ROM words. Ideal for industrial applications with CAN, SPI, TWI connectivity and low power mode. Contains 4 timers, 8 ADC channels, and supports up to 10-bit analog to digital conversion.

Details

2N2222A

Dionics-usa

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

MMBT2907ALT1G

Onsemi

MMBT2907ALT1G by Onsemi is a PNP BJT transistor with 100 min hFE, 60V VCEO, and 200MHz fT. Ideal for switching applications, it has a small outline package with Gull Wing terminals and can handle up to 0.6A of collector current.

Details

BAT15-074S Technical Details

TYPE	DESCRIPTION
Diode Element Material:	SILICON
Diode Type:	MIXER DIODE
Maximum Noise Figure:	5.5 dB
Maximum Operating Temperature:	150 Cel
Sub-Category:	Microwave Mixer Diodes
Surface Mount:	YES

Category Top Products

BAT17-05WE6327

Infineon Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

MBD110DWT1

Onsemi

MBD110DWT1 by Onsemi is a microwave mixer & detector diode with 2 elements, suitable for very high to ultra high frequency applications. It features a max forward voltage of 0.6V and can operate at temperatures up to 125 °C. This Schottky diode has a peak power dissipation of 0.12W and is surface mountable in a small outline package shape.

934054935335

NXP Semiconductors

MIXER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

HSMS-2822-TR1G

Agilent Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

BA482153

NXP Semiconductors

MIXER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

BAT15-074

Infineon Technologies

MIXER DIODE; Terminal Position: UNSPECIFIED; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

BAR28-B2

STMicroelectronics

BAR28-B2 by STMicroelectronics is a single Schottky mixer diode with a max operating temperature of 200 °C and frequency band from VHF to UHF. With a diode capacitance of 2 pF, it is ideal for applications requiring very high frequency signal mixing in microwave circuits. The package shape is round with an isolated case connection, making it suitable for use in various RF and microwave systems.

BAT45-B2

STMicroelectronics

BAT45-B2 by STMicroelectronics is a single Schottky mixer diode with 1.1 pF capacitance and 0.1 uA reverse current, ideal for ultra high frequency applications. With a max forward voltage of 1V and output current of 30A, it operates at temperatures up to 125 °C in an isolated round glass package.

933912210235

NXP Semiconductors

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

BAT14-098

Infineon Technologies

MIXER DIODE; Surface Mount: YES; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Frequency: 12 GHz; Maximum Operating Temperature: 150 Cel; JESD-609 Code: e0;

MMDL770T1G

Onsemi

MMDL770T1G by Onsemi is a single microwave mixer diode with Schottky technology. It operates in the very high frequency to ultra high frequency band, with a max forward voltage of 1V. Ideal for applications requiring small outline surface mount diodes, such as RF mixers and detectors.

NSVMMBD352WT1G

Onsemi

NSVMMBD352WT1G by Onsemi is a Schottky mixer diode with matte tin finish. It operates at max temp of 150°C, peak reflow temp of 260°C, and can withstand 30s at peak reflow temp. Ideal for microwave applications due to its surface mount capability.

BAT15-113S

Infineon Technologies

MIXER DIODE; Surface Mount: YES; Maximum Noise Figure: 7.5 dB; Diode Element Material: SILICON; Maximum Operating Temperature: 150 Cel;

BA892H6327

Infineon Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

TGD0653SSMX

Texas Instruments

TGD0653SSMX by Texas Instruments is a single Schottky mixer diode with Gallium Arsenide element. Operating in very high frequency to millimeter wave band, it comes in a ceramic, metal-sealed co-fired package suitable for surface mount applications. With isolated case connection and wrap-around terminals, it is ideal for RF and microwave systems requiring high-frequency mixing and detection capabilities.

BAT15-093S

Infineon Technologies

MIXER DIODE; Surface Mount: YES; Diode Element Material: SILICON; Maximum Noise Figure: 6.5 dB; Maximum Operating Temperature: 150 Cel;

BAT19-AZ1

STMicroelectronics

STMicroelectronics BAT19-AZ1 is a single mixer diode with 1.2 pF capacitance and 0.1 uA reverse current. Ideal for ultra high frequency applications, it operates at up to 125 °C with a breakdown voltage of 10V. The Schottky diode has a max forward voltage of 1V and can handle output currents up to 30A.

HSMS-2814-TR1G

Agilent Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

HSMS-286C-TR1G

Broadcom

Broadcom's HSMS-286C-TR1G is a Schottky microwave mixer diode with 2 elements, operating from 0.915 GHz to 5.8 GHz in C Band. It features a plastic/epoxy package, dual terminals with matte tin finish, and can withstand up to 150°C. Ideal for applications requiring high-frequency mixing and detection in compact designs.

BA483T/R

NXP Semiconductors

MIXER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;