FDMC86139P by Fairchild Semiconductor

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FDMC86139P

  • Manufacturer
    Fairchild Semiconductor
  • Manufacturer's Part Number
    FDMC86139P
  • Description
    P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 40 W; Terminal Form: NO LEAD; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
  • Datasheet

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FDMC86139P Technical Details

TYPE DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 4.4 A
Maximum Pulsed Drain Current (IDM): 30 A
Sub-Category: Other Transistors
Surface Mount: YES
Terminal Finish: NICKEL PALLADIUM GOLD
No. of Terminals: 5
Maximum Power Dissipation (Abs): 40 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-PDSO-N5
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .067 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 121 mJ
Other Names: FDMC86139PCT
2832-FDMC86139PTR
2156-FDMC86139P-OS
ONSONSFDMC86139P
FDMC86139PTR
FDMC86139PDKR
Polarity or Channel Type: P-CHANNEL
JESD-609 Code: e4
Minimum DS Breakdown Voltage: 100 V
Maximum Drain Current (Abs) (ID): 15 A
Peak Reflow Temperature (C): 260

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