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2N3019

Manufacturer

Central Semiconductor
Manufacturer's Part Number

2N3019
Description

Power Bipolar Transistors; Qualification: Not Qualified; JESD-609 Code: e0; Terminal Finish: TIN LEAD;
Datasheet

Datasheet

Not In Stock

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2N3019 Technical Details

TYPE	DESCRIPTION
Qualification:	Not Qualified
Sub-Category:	Other Transistors
Terminal Finish:	TIN LEAD
JESD-609 Code:	e0

Category Top Products

2N3055

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NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): .8 MHz; Maximum Collector Current (IC): 15 A; Case Connection: COLLECTOR;

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PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;

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NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Collector Current (IC): 25 A; Transistor Element Material: SILICON;

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NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE; Surface Mount: NO; Nominal Transition Frequency (fT): 20 MHz; Maximum Power Dissipation (Abs): 60 W; Maximum Collector Current (IC): 8 A;

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NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2 MHz; Maximum Collector Current (IC): 10 A; Package Shape: RECTANGULAR;

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PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 4 MHz; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 10 A;

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NPN; Configuration: SINGLE; Maximum Collector Current (IC): 4 A; Maximum Collector-Emitter Voltage: 80 V; Transistor Element Material: SILICON; No. of Elements: 1;

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