TIP147 by New Jersey Semiconductor Products

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

All prices are in USD

Bulk

QTY	Unit Price	Ext Price
11,070	$1.533	$16,973.631

TIP147

Manufacturer

New Jersey Semiconductor Products
Manufacturer's Part Number

TIP147
Description

PNP; Configuration: SINGLE; Maximum Collector Current (IC): 10 A; Transistor Element Material: SILICON; No. of Elements: 1; Minimum DC Current Gain (hFE): 500;
Datasheet

Datasheet

11070 In Stock

Popular Products

MBRS1100T3G

Onsemi

MBRS1100T3G by Onsemi is a Schottky rectifier diode with a max output current of 1A and forward voltage of 0.75V. It operates in temperatures ranging from -65 to 175°C, making it suitable for power applications. With a reverse test voltage of 100V, this diode is ideal for high-power circuits requiring efficient rectification.

Details

MBRA160T3G

Onsemi

MBRA160T3G by Onsemi is a Schottky rectifier diode with a max output current of 1A and forward voltage of 0.51V. It operates b/w -55 to 150°C, has a reverse test voltage of 60V, and is ideal for power applications due to its high efficiency and small outline package style.

Details

1N4148

Taiwan Semiconductor

RECTIFIER DIODE; Surface Mount: NO; Peak Reflow Temperature (C): 260; Maximum Operating Temperature: 175 Cel; JESD-609 Code: e3; No. of Elements: 1;

Details

MC33269T-3.3G

Onsemi

MC33269T-3.3G by Onsemi is a fixed positive single output LDO regulator with a max output current of 0.8 A and a dropout voltage of 1.35 V. It is commonly used in applications that require stable voltage regulation, such as power supplies for electronic devices.

Details

LM358N

Freescale Semiconductor

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;

Details

SZNUP2105LT1G

Onsemi

SZNUP2105LT1G by Onsemi is a Transient Suppression Device with 2 elements in a common anode configuration. It has a max non-repetitive peak reverse power dissipation of 350W and breakdown voltage of 29.1V. Ideal for applications requiring bidirectional polarity protection, such as automotive electronics and industrial equipment due to its AEC-Q101 compliance and high clamping voltage of 44V.

Details

SS14

Pro-an Electronic

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

IRLML6401TRPBF

International Rectifier

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Minimum Operating Temperature: -55 Cel; Avalanche Energy Rating (EAS): 33 mJ;

Details

1N4148WS

Multicomp Pro

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

LL4148

Promax-johnton

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

2N7002

Vishay Siliconix

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Terminal Form: GULL WING; Qualification: Not Qualified;

Details

MBR0520LT3G

Onsemi

MBR0520LT3G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.385V and output current of 0.5A. It operates b/w -65°C to 125°C, ideal for applications requiring high-speed switching and low power loss in compact electronic devices. The package style is small outline, making it suitable for surface mount designs in various electronics.

Details

FDD5614P

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 42 W; Terminal Position: SINGLE; Terminal Form: GULL WING;

Details

1N4148WS

Dc Components

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

2N2222A

Aeroflex/metelics

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Package Shape: ROUND; Transistor Application: SWITCHING;

Details

OPA2277UA/2K5

Texas Instruments

OPA2277UA/2K5 by Texas Instruments is a dual operational amplifier with low offset voltage of 100 uV and micropower consumption of 0.004 uA. Ideal for industrial applications, it offers high common mode rejection ratio of 140 dB and unity gain bandwidth of 1 MHz. With a compact rectangular package style, it is suitable for surface mount designs in various electronic systems.

Details

LM317T

Sgs-ates Componenti Electronici S P A

Other Regulators; No. of Terminals: 3; JESD-609 Code: e0; Terminal Position: SINGLE; Adjustability: ADJUSTABLE; Maximum Load Regulation (%): 1.5 %;

Details

LM358M

Raytheon Semiconductor

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;

Details

STM32H753IIK6

STMicroelectronics

STM32H753IIK6 by STMicroelectronics is a 32-bit microcontroller with 176 terminals, operating at up to 48 MHz. It features 20-Ch 16-Bit ADCs, 2-Ch 12-Bit DACs, and peripherals like CAN, ETHERNET, and USB. Ideal for industrial applications requiring high-speed processing and extensive connectivity options.

Details

BAV99

General Semiconductor

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

TIP147 Technical Details

TYPE	DESCRIPTION
Maximum Collector Current (IC):	10 A
Maximum Collector-Emitter Voltage:	100 V
Configuration:	SINGLE
Transistor Element Material:	SILICON
No. of Elements:	1
Polarity or Channel Type:	PNP
Minimum DC Current Gain (hFE):	500

Category Top Products

2N3055

Philips Components

NPN; Surface Mount: NO; Nominal Transition Frequency (fT): .8 MHz; Maximum Collector Current (IC): 15 A; Transistor Element Material: SILICON; Minimum DC Current Gain (hFE): 20;

TIP125

Bourns

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Minimum DC Current Gain (hFE): 1000;

TIP112G

Onsemi

TIP112G by Onsemi is a power BJT transistor with NPN polarity. It has a max power dissipation of 50W and can handle a max collector-emitter voltage of 100V. This transistor is commonly used in amplifier applications due to its high DC current gain (hFE) of 500 and nominal transition frequency (fT) of 25MHz.

TIP32C

Kec

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Collector Current (IC): 3 A; Terminal Position: SINGLE;

TIP36C

Continental Device India

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 25 A;

TIP50

Central Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 1 A;

TIP36C

New Jersey Semiconductor Products

PNP; Configuration: SINGLE; Nominal Transition Frequency (fT): 3 MHz; Maximum Collector Current (IC): 25 A; No. of Elements: 1; Transistor Element Material: SILICON;

TIP31C

Changzhou Galaxy Century Microelectronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Collector Current (IC): 3 A; Package Style (Meter): FLANGE MOUNT;

BD13910STU

Onsemi

BD13910STU by Onsemi is a NPN BJT transistor with 80V VCEO and 1.5A IC, ideal for switching applications. With a hFE of 63 and 13W Ptot, it operates up to 150°C making it suitable for high-power tasks in various electronic circuits. The package style is flange mount with through-hole terminals, offering ease of installation.

MC1413BDR2G

Onsemi

MC1413BDR2G by Onsemi is a NPN BJT transistor with 1000 min hFE. It operates up to 150°C, handles 50V max collector-emitter voltage, and supports switching applications. The package is small outline with 16 terminals in gull wing form for surface mount assembly.

BD138

STMicroelectronics

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 75 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;

TIP41C

Secos

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;

TIP35C

Microsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Collector Current (IC): 25 A; Transistor Element Material: SILICON;

MJD45H11T4G

Onsemi

MJD45H11T4G by Onsemi is a PNP power bipolar junction transistor (BJT) with a max collector-emitter voltage of 80V and a max collector current of 8A. It is commonly used for switching applications due to its high power dissipation of 20W and small outline package style.

2N3055

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;

TIP122TU

Onsemi

TIP122TU by Onsemi is a NPN power BJT with Darlington configuration, ideal for switching applications. It features a max collector-emitter voltage of 100V, max collector current of 5A, and min DC current gain of 1000. With a package style of flange mount and terminal form through-hole, it offers high power dissipation up to 65W in various electronic designs.

TIP122

Inchange Semiconductor

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Package Style (Meter): FLANGE MOUNT;

MJE3055T

Onsemi

MJE3055T by Onsemi is a NPN BJT transistor with max. power dissipation of 75W, ideal for switching applications. With a max. collector-emitter voltage of 60V and max. collector current of 10A, it operates b/w -55 to 150°C. Its package style is flange mount with through-hole terminals, making it suitable for various power circuit designs.

TIP50

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 1 A;

TIP31C

Bourns

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 3 A; Maximum Operating Temperature: 150 Cel;