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TIP112G
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ManufacturerOnsemi
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Manufacturer's Part NumberTIP112G
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DescriptionNPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 25 MHz; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A;
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Datasheet
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DetailsTIP112G Technical Details
| TYPE | DESCRIPTION |
|---|---|
| Nominal Transition Frequency (fT): | 25 MHz |
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Collector Current (IC): | 2 A |
| Configuration: | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR |
| Transistor Element Material: | SILICON |
| Transistor Application: | AMPLIFIER |
| Sub-Category: | Other Transistors |
| Surface Mount: | NO |
| Terminal Finish: | TIN |
| No. of Terminals: | 3 |
| Maximum Power Dissipation (Abs): | 50 W |
| Terminal Position: | SINGLE |
| Package Style (Meter): | FLANGE MOUNT |
| JESD-30 Code: | R-PSFM-T3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | THROUGH-HOLE |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | COLLECTOR |
| Other Names: | TIP112GOS 2832-TIP112G ONSONSTIP112G 2156-TIP112G-OS |
| JEDEC-95 Code: | TO-220AB |
| Polarity or Channel Type: | NPN |
| Minimum DC Current Gain (hFE): | 500 |
| JESD-609 Code: | e3 |
| Qualification: | Not Qualified |
| Maximum Collector-Emitter Voltage: | 100 V |
| Additional Features: | LEADFORM OPTIONS ARE AVAILABLE |
