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BD139
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ManufacturerSamsung
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Manufacturer's Part NumberBD139
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DescriptionNPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;
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Datasheet
1960 In Stock
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DetailsBD139 Technical Details
TYPE | DESCRIPTION |
---|---|
Nominal Transition Frequency (fT): | 250 MHz |
Package Body Material: | PLASTIC/EPOXY |
Maximum Collector Current (IC): | 1.5 A |
Configuration: | SINGLE |
Transistor Element Material: | SILICON |
Transistor Application: | SWITCHING |
JEDEC-95 Code: | TO-126 |
Sub-Category: | Other Transistors |
Polarity or Channel Type: | NPN |
Surface Mount: | NO |
Minimum DC Current Gain (hFE): | 40 |
No. of Terminals: | 3 |
Qualification: | Not Qualified |
Maximum Power Dissipation (Abs): | 8 W |
Maximum Collector-Emitter Voltage: | 80 V |
Terminal Position: | SINGLE |
Package Style (Meter): | FLANGE MOUNT |
JESD-30 Code: | R-PSFM-T3 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | THROUGH-HOLE |
Maximum Operating Temperature: | 150 Cel |
Case Connection: | ISOLATED |