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NJVMJD112T4G

Manufacturer

Onsemi
Manufacturer's Part Number

NJVMJD112T4G
Description

NPN; Configuration: DARLINGTON; Surface Mount: YES; Nominal Transition Frequency (fT): 25 MHz; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): 2 A;
Datasheet

Datasheet

2407 In Stock

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NJVMJD112T4G Technical Details

TYPE	DESCRIPTION
Nominal Transition Frequency (fT):	25 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	2 A
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	DARLINGTON
Transistor Element Material:	SILICON
Sub-Category:	Other Transistors
Surface Mount:	YES
Terminal Finish:	MATTE TIN
No. of Terminals:	2
Maximum Power Dissipation (Abs):	20 W
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Maximum Operating Temperature:	150 Cel
Moisture Sensitivity Level (MSL):	1
Other Names:	488-NJVMJD112T4GCT 488-NJVMJD112T4GTR NJVMJD112T4G-ND 2832-NJVMJD112T4GTR 488-NJVMJD112T4GDKR 2156-NJVMJD112T4G-OS ONSONSNJVMJD112T4G
Polarity or Channel Type:	NPN
Minimum DC Current Gain (hFE):	1000
JESD-609 Code:	e3
Minimum Operating Temperature:	-65 Cel
Maximum Collector-Emitter Voltage:	100 V
Reference Standard:	AEC-Q101
Peak Reflow Temperature (C):	260

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