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2SC5200N(S1,E,S)

Manufacturer

Toshiba
Manufacturer's Part Number

2SC5200N(S1,E,S)
Description

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 30 MHz; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 15 A;
Datasheet

Datasheet

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2SC5200N(S1,E,S) Technical Details

TYPE	DESCRIPTION
Nominal Transition Frequency (fT):	30 MHz
Other Names:	2SC5200N(S1ES)
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	15 A
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	AMPLIFIER
Polarity or Channel Type:	NPN
Surface Mount:	NO
Minimum DC Current Gain (hFE):	35
No. of Terminals:	3
Maximum Power Dissipation (Abs):	150 W
Maximum Collector-Emitter Voltage:	230 V
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Maximum Operating Temperature:	150 Cel
Maximum Collector-Base Capacitance:	200 pF
Case Connection:	COLLECTOR
Maximum VCEsat:	3 V

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