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2SC5200N(S1,E,S)
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ManufacturerToshiba
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Manufacturer's Part Number2SC5200N(S1,E,S)
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DescriptionNPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 30 MHz; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 15 A;
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Datasheet
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Details2SC5200N(S1,E,S) Technical Details
| TYPE | DESCRIPTION |
|---|---|
| Nominal Transition Frequency (fT): | 30 MHz |
| Other Names: | 2SC5200N(S1ES) |
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Collector Current (IC): | 15 A |
| Configuration: | SINGLE |
| Transistor Element Material: | SILICON |
| Transistor Application: | AMPLIFIER |
| Polarity or Channel Type: | NPN |
| Surface Mount: | NO |
| Minimum DC Current Gain (hFE): | 35 |
| No. of Terminals: | 3 |
| Maximum Power Dissipation (Abs): | 150 W |
| Maximum Collector-Emitter Voltage: | 230 V |
| Terminal Position: | SINGLE |
| Package Style (Meter): | FLANGE MOUNT |
| JESD-30 Code: | R-PSFM-T3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | THROUGH-HOLE |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Collector-Base Capacitance: | 200 pF |
| Case Connection: | COLLECTOR |
| Maximum VCEsat: | 3 V |
