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SBCP56T1G

Manufacturer

Onsemi
Manufacturer's Part Number

SBCP56T1G
Description

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 130 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): 1 A;
Datasheet

Datasheet

284 In Stock

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SBCP56T1G Technical Details

TYPE	DESCRIPTION
Nominal Transition Frequency (fT):	130 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	1 A
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	AMPLIFIER
Sub-Category:	Other Transistors
Surface Mount:	YES
Terminal Finish:	MATTE TIN
No. of Terminals:	4
Maximum Power Dissipation (Abs):	1.5 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Maximum Operating Temperature:	150 Cel
Case Connection:	COLLECTOR
Moisture Sensitivity Level (MSL):	1
Other Names:	SBCP56T1GOSCT SBCP56T1G-ND SBCP56T1GOSTR SBCP56T1GOSDKR
JEDEC-95 Code:	TO-261AA
Polarity or Channel Type:	NPN
Minimum DC Current Gain (hFE):	40
JESD-609 Code:	e3
Maximum Collector-Emitter Voltage:	80 V
Peak Reflow Temperature (C):	260

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