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NJVMJD122T4G-VF01

Manufacturer

Onsemi
Manufacturer's Part Number

NJVMJD122T4G-VF01
Description

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): 8 A; JESD-609 Code: e3; Package Shape: RECTANGULAR;
Datasheet

Datasheet

969 In Stock

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NJVMJD122T4G-VF01 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	8 A
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material:	SILICON
Transistor Application:	AMPLIFIER
Surface Mount:	YES
Terminal Finish:	MATTE TIN
No. of Terminals:	2
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Maximum Operating Temperature:	150 Cel
Case Connection:	COLLECTOR
Moisture Sensitivity Level (MSL):	1
Other Names:	NJVMJD122T4G-VF01OSTR NJVMJD122T4G-VF01OSDKR NJVMJD122T4G-VF01OSCT
Polarity or Channel Type:	NPN
Minimum DC Current Gain (hFE):	100
JESD-609 Code:	e3
Minimum Operating Temperature:	-65 Cel
Maximum Collector-Emitter Voltage:	100 V
Reference Standard:	AEC-Q101
Peak Reflow Temperature (C):	260

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