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T2N7002BK,LM

Manufacturer

Toshiba
Manufacturer's Part Number

T2N7002BK,LM
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 1 W; No. of Terminals: 3; Maximum Drain Current (ID): .4 A;
Datasheet

Datasheet

Not In Stock

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T2N7002BK,LM Technical Details

TYPE	DESCRIPTION
Other Names:	T2N7002BKLM T2N7002BK,LM(B T2N7002BKLMDKR T2N7002BKLMCT T2N7002BKLMTR T2N7002BK,LM(T
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Feedback Capacitance (Crss):	1.3 pF
Maximum Drain Current (ID):	.4 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
No. of Terminals:	3
Minimum DS Breakdown Voltage:	60 V
Maximum Power Dissipation (Abs):	1 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Drain-Source On Resistance:	1.75 ohm

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