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MJD45H11T4

Manufacturer

STMicroelectronics
Manufacturer's Part Number

MJD45H11T4
Description

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 40 MHz; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): 8 A;
Datasheet

Datasheet

3535 In Stock

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MJD45H11T4 Technical Details

TYPE	DESCRIPTION
Nominal Transition Frequency (fT):	40 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	8 A
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	SWITCHING
Sub-Category:	Other Transistors
Surface Mount:	YES
Terminal Finish:	MATTE TIN
No. of Terminals:	2
Maximum Power Dissipation (Abs):	20 W
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Maximum Operating Temperature:	150 Cel
Maximum Power Dissipation Ambient:	20 W
Moisture Sensitivity Level (MSL):	1
Other Names:	MJD45H11T4ST-ND 497-6466-1 497-6466-2 497-6466-6
JEDEC-95 Code:	TO-252
Polarity or Channel Type:	PNP
Minimum DC Current Gain (hFE):	40
JESD-609 Code:	e3
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	80 V
Peak Reflow Temperature (C):	260
Maximum VCEsat:	1 V

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