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MJD45H11-1G

Manufacturer

Onsemi
Manufacturer's Part Number

MJD45H11-1G
Description

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 40 MHz; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): 8 A;
Datasheet

Datasheet

151 In Stock

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MJD45H11-1G Technical Details

TYPE	DESCRIPTION
Nominal Transition Frequency (fT):	40 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	8 A
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	SWITCHING
Sub-Category:	Other Transistors
Surface Mount:	NO
Terminal Finish:	MATTE TIN
No. of Terminals:	3
Maximum Power Dissipation (Abs):	20 W
Terminal Position:	SINGLE
Package Style (Meter):	IN-LINE
JESD-30 Code:	R-PSIP-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Maximum Operating Temperature:	150 Cel
Case Connection:	COLLECTOR
Moisture Sensitivity Level (MSL):	1
Other Names:	2156-MJD45H11-1G-OS ONSONSMJD45H11-1G MJD45H111G 2832-MJD45H11-1G =MJD45H11 MJD45H11-1GOS
Polarity or Channel Type:	PNP
Minimum DC Current Gain (hFE):	40
JESD-609 Code:	e3
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	80 V
Peak Reflow Temperature (C):	260

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