Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

DDC2354-220

Manufacturer

Skyworks Solutions
Manufacturer's Part Number

DDC2354-220
Description

MIXER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: SQUARE;
Datasheet

Datasheet

Not In Stock

Popular Products

BAV99

Shanghai Lunsure Electronic Technology

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

SS14

Pro-an Electronic

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

ULN2803A

YOUTAI SEMICONDUCTOR CO LTD

BUFFER OR INVERTER BASED PERIPHERAL DRIVER; Terminal Form: GULL WING; No. of Terminals: 18; Package Code: SOP; Package Shape: RECTANGULAR; JESD-30 Code: R-PDSO-G18;

Details

2N2222A

Dionics-usa

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

IRLML6402TRPBF

Infineon Technologies

IRLML6402TRPBF by Infineon is a P-CHANNEL FET for SWITCHING applications. It features a 20V DS Breakdown Voltage, 22A IDM, and 0.065 ohm RDS(on). With a small outline package and matte tin finish, it operates in temperatures from -55 to 150 °C.

Details

SMBJ18CA

Vishay Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: J BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

1N4148

Itt Components

RECTIFIER DIODE; Surface Mount: NO; Config: SINGLE; Maximum Operating Temperature: 200 Cel; Maximum Repetitive Peak Reverse Voltage: 100 V; Maximum Output Current: .15 A;

Details

M39029/56-351

Defense Logistics Agency

CONNECTOR ACCESSORY; MIL Conformity: YES; Contact Gender: FEMALE; Mating Contacts: M39029/58-363; Removal Tool Sources: MILITARY; Alternate Contact Sources: MILITARY;

Details

2N2222A

Micropac Industries

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

2N7002

North American Philips Discrete Products Div

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (ID): .115 A;

Details

LM358N

Philips Semiconductors

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;

Details

SMBJ18CA

Sensitron Semiconductor

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

BAV99WT1G

Onsemi

BAV99WT1G by Onsemi is a series connected diode with 0.006 us reverse recovery time. It is a small outline rectifier diode with 70V peak reverse voltage, ideal for surface mount applications in electronics requiring fast switching and low forward voltage drop.

Details

TM4C1294NCPDTI3

Texas Instruments

TM4C1294NCPDTI3 by Texas Instruments is a 32-bit microcontroller with Cortex-M4F CPU family. It features 8KB data EEPROM, 20-Ch 12-Bit ADC channels, and 32 DMA channels. Ideal for industrial applications requiring high-speed processing, it offers connectivity options like CAN, Ethernet, I2C, SPI, UART, and USB.

Details

2N2222A

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .6 A;

Details

2N2222A

Onsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; No. of Terminals: 3;

Details

IRLML6402TRPBF

International Rectifier

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Peak Reflow Temperature (C): 260; Package Style (Meter): SMALL OUTLINE;

Details

BAV99

Kingwell Technonlogy

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

M24308/2-1F

Tyco Electronics Amp

D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; IEC Conformity: NO; Mixed Contacts: NO; Empty Shell: NO;

Details

EPCS4SI8N

Intel

EPCS4SI8N by Intel is a small outline flash memory with 512Kx8 organization, operating at 3.3V. It features a max clock frequency of 40MHz and endurance of 100k write/erase cycles. Ideal for industrial applications requiring configuration memory with serial interface and low standby current consumption.

Details

DDC2354-220 Technical Details

TYPE	DESCRIPTION
Package Body Material:	CERAMIC, METAL-SEALED COFIRED
Maximum Time At Peak Reflow Temperature (s):	40
Config:	SINGLE
Diode Type:	MIXER DIODE
Frequency Band:	K BAND
Maximum Impedance:	15000 ohm
Sub-Category:	Other Diodes
Surface Mount:	YES
Diode Element Material:	SILICON
No. of Terminals:	2
Minimum Impedance:	5000 ohm
Qualification:	Not Qualified
Terminal Position:	DUAL
Minimum Tangential Signal Sensitivity:	-56 dBm
Package Style (Meter):	MICROWAVE
Technology:	SCHOTTKY
Schottky Barrier Type:	ZERO BARRIER
JESD-30 Code:	S-CDMW-F2
No. of Elements:	1
Package Shape:	SQUARE
Maximum Power Dissipation:	.075 W
Terminal Form:	FLAT
Peak Reflow Temperature (C):	260
Moisture Sensitivity Level (MSL):	1

Category Top Products

BAT15-04R

Infineon Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

HSMS-2812-BLKG

Agilent Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

BAT17W

Infineon Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

MMBD301LT1

Leshan Radio

MIXER DIODE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Operating Temperature: 125 Cel;

BAT15-110R

Infineon Technologies

MIXER DIODE; Terminal Position: QUAD; Terminal Form: FLAT; No. of Terminals: 4; Surface Mount: YES; Package Shape: SQUARE;

BAT15-090D

Infineon Technologies

MIXER DIODE; Terminal Position: UNSPECIFIED; Terminal Form: FLAT; No. of Terminals: 3; Surface Mount: YES; Package Shape: UNSPECIFIED;

BAT68-06E6433

Infineon Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

BAT6806E6327HTSA1

Infineon Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

BAT6307WE6327HTSA1

Infineon Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 4; Surface Mount: YES; Package Shape: RECTANGULAR;

BAT62-08S

Infineon Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 6; Surface Mount: YES; Package Shape: RECTANGULAR;

HSMS-285B-TR1G

Broadcom

HSMS-285B-TR1G by Broadcom is a Schottky mixer diode with a frequency range of 0.915 GHz to 4 GHz. It features a zero barrier Schottky element and operates at temperatures up to 150°C. This single-config diode in a small outline package is ideal for microwave applications in the L band.

1PS79SB17,115

NXP Semiconductors

1PS79SB17,115 by NXP Semiconductors is a single Schottky mixer diode with a max forward voltage of 0.35V and a max repetitive peak reverse voltage of 4V. It has a diode capacitance of 1pF, operates at temperatures up to 150°C, and is suitable for microwave applications requiring high-frequency signal mixing and detection.

BAT19-AZX

STMicroelectronics

BAT19-AZX by STMicroelectronics is a single-config microwave mixer diode with ultra-high frequency band. Featuring a max diode capacitance of 1.2 pF and max reverse current of 0.1 uA, it is ideal for applications requiring high-frequency signal mixing in electronic circuits. With a Schottky technology and silicon diode element material, this diode operates at temperatures up to 125 °C, making it suitable for various RF applications.

MMBD101LT1

Onsemi

MMBD101LT1 by Onsemi is a Schottky mixer diode with 1 pF capacitance, suitable for ultra high frequency applications. It features a small outline package with gull wing terminals and can operate at up to 150 °C. This surface-mount diode has a max power dissipation of 0.225 W, making it ideal for microwave mixing and detection in various electronic devices.

BAT15-013ES

Infineon Technologies

MIXER DIODE; Terminal Position: END; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

BA423A113

NXP Semiconductors

MIXER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

BAT19-AR1

STMicroelectronics

BAT19-AR1 by STMicroelectronics is a single-config microwave mixer diode with 1.2 pF capacitance and 0.1 uA reverse current. Ideal for ultra high frequency applications, it operates at up to 125 °C with a breakdown voltage of 10 V, featuring Schottky technology and wire terminals.

BAT6806WE6327HTSA1

Infineon Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

BAT62-03W

Infineon Technologies

Infineon Technologies' BAT62-03W is a single-config microwave mixer & detector diode with ultra high frequency range. It has a max diode capacitance of 0.6 pF and can operate at temperatures up to 150°C. This Schottky diode, made of silicon, is commonly used in applications requiring low barrier Schottky barrier type diodes.

BA481113

NXP Semiconductors

MIXER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;