Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

All prices are in USD

Bulk

QTY	Unit Price	Ext Price
375	Request Pricing	-

BAT14-093H

Manufacturer

Infineon Technologies
Manufacturer's Part Number

BAT14-093H
Description

MIXER DIODE; Terminal Position: END; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
Datasheet

Datasheet

375 In Stock

Popular Products

LM317D2TG

Onsemi

LM317D2TG by Onsemi is an adjustable positive single output standard regulator with a max output current of 1.5A and a max output voltage of 37V. It operates in temperatures ranging from 0 to 125°C, making it suitable for various applications requiring precise voltage regulation in compact spaces.

Details

2N2222A

Semitronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

LM555CMX

National Semiconductor

PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;

Details

1N4148WS

Cheng-yi Electronic

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

SS14

Hitano Enterprise

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

1N4148

Semitronics

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

1N4148

American Power Devices

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

SS14

Rfe International

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

2N7002

Formosa Microsemi

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (Abs) (ID): .115 A;

Details

2N2222A

Semiconductor Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

SMBJ18CA

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

DP83848IVVX/NOPB

National Semiconductor

ETHERNET TRANSCEIVER; Temperature Grade: INDUSTRIAL; Terminal Form: GULL WING; No. of Terminals: 48; Package Code: QFP; Package Shape: SQUARE;

Details

BAV99

Diotec Semiconductor Ag

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

BSS138

Changzhou Galaxy Century Microelectronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Minimum DS Breakdown Voltage: 50 V; Maximum Operating Temperature: 150 Cel;

Details

BSS138NH6327XTSA2

Infineon Technologies

BSS138NH6327XTSA2 by Infineon is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for small signal applications. Operating in Enhancement Mode, it has 0.36W Power Dissipation and 3.5 ohm Drain-Source Resistance. With Gull Wing terminals and AEC-Q101 reference standard, it's suitable for automotive electronics due to its high temperature range of -55 to 150 °C.

Details

2N7002

Supertex

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; No. of Elements: 1; Maximum Feedback Capacitance (Crss): 5 pF;

Details

1N4148

Renesas Electronics

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

BSS138BKW,115

NXP Semiconductors

NXP Semiconductors' BSS138BKW,115 is a N-CHANNEL FET with 60V DS breakdown voltage and 0.32A ID. Ideal for SWITCHING applications, it features a built-in diode, 1.6 ohm RDS(on), and operates in ENHANCEMENT MODE. Suitable for surface mount with GULL WING terminals, it meets AEC-Q101 standards.

Details

MBR1560CT

General Instrument

MBR1560CT by General Instrument is a common cathode rectifier diode with a max forward voltage of 0.75V and max output current of 15A. It is used for efficiency applications, has a package shape of rectangular, and can operate in temperatures ranging from -65 to 150 °C.

Details

1N4148

Frontier Electronics

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

BAT14-093H Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Config:	SINGLE
Diode Type:	MIXER DIODE
Maximum Noise Figure:	6.5 dB
Sub-Category:	Microwave Mixer Diodes
Surface Mount:	YES
Diode Element Material:	SILICON
No. of Terminals:	2
Qualification:	Not Qualified
Terminal Position:	END
Maximum Diode Capacitance:	.3 pF
Package Style (Meter):	LONG FORM
Technology:	SCHOTTKY
Schottky Barrier Type:	MEDIUM BARRIER
JESD-30 Code:	O-PELF-N2
No. of Elements:	1
Package Shape:	ROUND
Maximum Power Dissipation:	.05 W
Terminal Form:	NO LEAD
Additional Features:	HIGH RELIABILITY
Maximum Operating Temperature:	150 Cel
Case Connection:	ISOLATED

Category Top Products

DA4X106U0R

ROHM

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 4; Surface Mount: YES; Package Shape: RECTANGULAR;

MMDL301T1

Onsemi

MMDL301T1 by Onsemi is a single microwave mixer diode with Schottky technology. It operates in very high to ultra high frequency bands, with a max forward voltage of 0.45V and repetitive peak reverse voltage of 30V. Ideal for applications requiring small outline packages and surface mount capabilities.

BA592E6433HTMA1

Infineon Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

DMF3932-000

Skyworks Solutions

The Skyworks Solutions DMF3932-000 is a microwave mixer diode with 2 elements, Schottky technology, and low barrier type. Operating in the S band, it has a max capacitance of 0.5 pF and can withstand temperatures up to 150°C. Ideal for applications requiring high-frequency mixing and detection in compact electronic devices.

BAT14-099

Infineon Technologies

MIXER DIODE; Surface Mount: YES; Diode Element Material: SILICON; JESD-609 Code: e0; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Frequency: 12 GHz;

BAT15-020D

Infineon Technologies

MIXER DIODE; Terminal Position: UNSPECIFIED; Terminal Form: FLAT; No. of Terminals: 3; Surface Mount: YES; Package Shape: UNSPECIFIED;

DB3J316F0L

Panasonic

The Panasonic DB3J316F0L is a microwave mixer diode with 2 elements, Schottky technology, and a max forward voltage of 0.55V. It operates in the very high-frequency band, has a package style of small outline, and can handle temperatures from -40°C to 85°C. Ideal for applications requiring high-frequency mixing and detection in compact electronic devices.

BAT62-07F

Infineon Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 4; Surface Mount: YES; Package Shape: RECTANGULAR;

BAT1504WE6327HTSA1

Infineon Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

HSMS-2815-TR1G

Agilent Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 4; Surface Mount: YES; Package Shape: RECTANGULAR;

BAT14-104H

Infineon Technologies

MIXER DIODE; Terminal Position: UNSPECIFIED; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

HSMS-2850-TR1G

Broadcom

Broadcom's HSMS-2850-TR1G is a Schottky mixer diode with zero barrier technology. Operating from -65 to 150°C, it covers L Band frequencies from 0.915 GHz to 4 GHz. With a small outline package and gull wing terminals, it's ideal for microwave applications requiring high-frequency mixing and detection.

BA277

NXP Semiconductors

MIXER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

BAT15-123ES

Infineon Technologies

MIXER DIODE; Terminal Position: END; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

BAT2402LSE6327XTSA1

Infineon Technologies

Infineon's BAT2402LSE6327XTSA1 is a single-config microwave mixer diode with Schottky technology. Operating in K band, it has low barrier Schottky element made of silicon. With a max power dissipation of 0.1W and forward voltage of 0.41V, it is ideal for high-frequency applications requiring low capacitance and reverse current.

BAR28-AZ1

STMicroelectronics

BAR28-AZ1 by STMicroelectronics is a SCHOTTKY MIXER DIODE with 2 pF diode capacitance. It operates in the VERY HIGH to ULTRA HIGH FREQUENCY band, suitable for microwave applications. The diode has a glass package and can withstand temperatures from -65 °C to 200°C.

HSMS-2825-BLKG

Broadcom

HSMS-2825-BLKG by Broadcom is a Schottky mixer diode with 2 elements, operating in the C band frequency range. It features a max forward voltage of 0.34V and a reverse test voltage of 1V. This diode is suitable for microwave applications requiring high performance in small outline packages.

TMM5712

STMicroelectronics

TMM5712 by STMicroelectronics is a single microwave mixer diode with Schottky technology. It operates in the very high frequency to ultra high frequency band, with a max forward voltage of 1V and max power dissipation of 0.43W. Ideal for applications requiring high-frequency signal mixing and detection in a compact round glass package.

BAT15-02EL

Infineon Technologies

MIXER DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

BAT14-093S

Infineon Technologies

MIXER DIODE; Surface Mount: YES; Maximum Noise Figure: 6.5 dB; Diode Element Material: SILICON; Maximum Operating Temperature: 150 Cel;