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M378B5673EH1-CH9

Manufacturer

Samsung
Manufacturer's Part Number

M378B5673EH1-CH9
Description

DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 240; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
Datasheet

Datasheet

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M378B5673EH1-CH9 Technical Details

TYPE	DESCRIPTION
Package Body Material:	UNSPECIFIED
Maximum Standby Current:	.16 Amp
Organization:	256MX64
Output Characteristics:	3-STATE
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Access Mode:	DUAL BANK PAGE BURST
Minimum Supply Voltage (Vsup):	1.425 V
Sub-Category:	DRAMs
Surface Mount:	NO
Maximum Supply Current:	2120 mA
No. of Terminals:	240
Maximum Clock Frequency (fCLK):	667 MHz
No. of Words:	268435456 words
Terminal Position:	DUAL
Package Style (Meter):	MICROELECTRONIC ASSEMBLY
Technology:	CMOS
JESD-30 Code:	R-XDMA-N240
Package Shape:	RECTANGULAR
Terminal Form:	NO LEAD
Operating Mode:	SYNCHRONOUS
Maximum Operating Temperature:	95 Cel
Package Code:	DIMM
Input/Output Type:	COMMON
No. of Ports:	1
Memory Density:	17179869184 bit
Self Refresh:	YES
Memory IC Type:	DDR DRAM MODULE
Minimum Operating Temperature:	0 Cel
Memory Width:	64
No. of Functions:	1
Qualification:	Not Qualified
Package Equivalence Code:	DIMM240,40
Refresh Cycles:	8192
Maximum Access Time:	.255 ns
No. of Words Code:	256M
Nominal Supply Voltage / Vsup (V):	1.5
Additional Features:	AUTO/SELF REFRESH
Peak Reflow Temperature (C):	NOT SPECIFIED
Terminal Pitch:	1 mm
Temperature Grade:	OTHER
Maximum Supply Voltage (Vsup):	1.575 V
Power Supplies (V):	1.5

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