Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

KM48V2104BK-6

Manufacturer

Samsung
Manufacturer's Part Number

KM48V2104BK-6
Description

EDO DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 28; Package Code: SOJ; Refresh Cycles: 2048; Package Shape: RECTANGULAR;
Datasheet

Datasheet

Not In Stock

Popular Products

1N4148WS

Panjit International

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

LM317T

Fairchild Semiconductor

ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Terminal Form: THROUGH-HOLE; Maximum Output Current-1: 1.5 A; No. of Outputs: 1; Qualification Status: Not Qualified;

Details

SS14

Changzhou Starsea Electronics

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

LM555CN

Texas Instruments

LM555CN by Texas Instruments is an Analog Waveform Generation IC with a supply voltage range of 4.5V to 16V. It operates b/w 0°C to 70°C, making it suitable for commercial applications. This rectangular package IC has dual terminals and uses bipolar technology for pulse generation in various electronic circuits.

Details

LM317T/NOPB

National Semiconductor

ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Package Code: TO-220; Terminal Form: THROUGH-HOLE; JESD-609 Code: e3; Package Shape: RECTANGULAR;

Details

SMBJ18CA

Yageo

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

NDT2955

National Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; JESD-609 Code: e0; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

Details

2N7002

Continental Device India

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .83 W; Package Body Material: PLASTIC/EPOXY; JEDEC-95 Code: TO-236AB;

Details

MBRS130LT3G

Onsemi

MBRS130LT3G by Onsemi is a Schottky rectifier diode with a max output current of 1A and forward voltage of 0.445V. It operates b/w -65 to 125°C, has a reverse test voltage of 30V, and is ideal for power applications due to its small outline package style.

Details

ULN2803A

Onsemi

NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Package Body Material: PLASTIC/EPOXY; Qualification: Not Qualified;

Details

2N2222A

Solid State Devices

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

LL4148

Leshan Radio

RECTIFIER DIODE; Surface Mount: YES; Maximum Non Repetitive Peak Forward Current: 2 A; Maximum Reverse Recovery Time: .004 us; No. of Phases: 1; Maximum Operating Temperature: 175 Cel;

Details

STM32H743ZIT6

STMicroelectronics

STM32H743ZIT6 by STMicroelectronics is a 32-bit microcontroller with integrated cache and a max supply voltage of 3.6V. It is commonly used in industrial applications, offering features such as 21 timers, CAN and USB connectivity, and low power mode.

Details

1N4148

Silicon Standard

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

LL4148

Daco Semiconductor

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

LM555CMX

National Semiconductor

PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;

Details

1N4148WS

Surge Components

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

FT232RQ-REEL

FTDI

FTDI's FT232RQ-REEL is a USB bus controller with 32 terminals, operating at 3.3-5.25V. It supports data transfer rates up to 60MBps and clock frequency of 12.02MHz, suitable for RS232/RS422/RS485 interfaces in various applications like industrial automation and communication systems.

Details

1N4148

Weitron Technology

RECTIFIER DIODE; Surface Mount: NO; Maximum Reverse Recovery Time: .004 us; Config: SINGLE; Maximum Output Current: .15 A; Terminal Finish: Tin/Lead (Sn/Pb);

Details

BAV99

Secos

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

KM48V2104BK-6 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Standby Current:	.0005 Amp
Organization:	2MX8
Output Characteristics:	3-STATE
Maximum Seated Height:	3.76 mm
Access Mode:	FAST PAGE WITH EDO
Minimum Supply Voltage (Vsup):	3 V
Sub-Category:	DRAMs
Surface Mount:	YES
Maximum Supply Current:	100 mA
Terminal Finish:	TIN LEAD
No. of Terminals:	28
No. of Words:	2097152 words
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
Technology:	CMOS
JESD-30 Code:	R-PDSO-J28
Package Shape:	RECTANGULAR
Terminal Form:	J BEND
Operating Mode:	ASYNCHRONOUS
Maximum Operating Temperature:	70 Cel
Package Code:	SOJ
Width:	7.62 mm
Input/Output Type:	COMMON
No. of Ports:	1
Memory Density:	16777216 bit
Self Refresh:	NO
Memory IC Type:	EDO DRAM
JESD-609 Code:	e0
Minimum Operating Temperature:	0 Cel
Memory Width:	8
No. of Functions:	1
Qualification:	Not Qualified
Package Equivalence Code:	SOJ28,.34
Refresh Cycles:	2048
Length:	18.42 mm
Maximum Access Time:	60 ns
No. of Words Code:	2M
Nominal Supply Voltage / Vsup (V):	3.3
Additional Features:	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
Terminal Pitch:	1.27 mm
Temperature Grade:	COMMERCIAL
Maximum Supply Voltage (Vsup):	3.6 V
Power Supplies (V):	3.3

Category Top Products

K4B1G1646G-BCMA

Samsung

Samsung's K4B1G1646G-BCMA DDR3 DRAM features 64MX16 organization, 933 MHz clock frequency, and 1073741824 bit memory density. Ideal for high-performance computing applications requiring fast data processing and storage with a max standby current of 0.01 Amp.

IS43TR16256BL-107MBLI

Integrated Silicon Solution

IS43TR16256BL-107MBLI by Integrated Silicon Solution is a 256MX16 DDR3 DRAM with 1.35V supply, operating from -40 to 95°C. Featuring synchronous mode and self-refresh, it has a thin profile grid array package suitable for industrial applications requiring high memory density and multi-bank page burst access.

MT48LC8M16A2P-6A:L

Micron Technology

Micron Technology's MT48LC8M16A2P-6A:L is a 3.3V Synchronous DRAM with 8MX16 organization, operating at up to 167 MHz clock frequency. It features common I/O type, self-refresh mode, and supports four-bank page burst access. Ideal for commercial applications requiring high-speed memory with low power consumption.

MT46H32M16LFBF-6AT:C

Micron Technology

Micron Technology's MT46H32M16LFBF-6AT:C is a DDR1 DRAM with 32MX16 organization, 33554432 words, and 536870912 bit memory density. Operating at 105 °C max temp, it suits industrial applications requiring fast access times of 5 ns. With synchronous operation and self-refresh capability, this DRAM offers reliable performance in various electronic systems.

MT53E512M32D1ZW-046WT:B

Micron Technology

Micron Technology's MT53E512M32D1ZW-046WT:B is a LPDDR4 DRAM with 512MX32 organization, operating at up to 2136.7 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in thin-profile devices.

W631GU6NB12I

Winbond Electronics

W631GU6NB12I by Winbond Electronics is a DDR3L DRAM with 64MX16 organization, operating at a max clock frequency of 800 MHz. It has a memory density of 1Gb and is suitable for industrial temperature grade applications.

K4H561638H-UCB3

Samsung

Samsung's K4H561638H-UCB3 DDR1 DRAM features 16MX16 organization, 166 MHz clock frequency, and 70°C operating temperature. Ideal for applications requiring high memory density and fast access times in commercial-grade devices.

IS42VM16200D-6BLI

Integrated Silicon Solution

IS42VM16200D-6BLI by Integrated Silicon Solution is a 2MX16 Synchronous DRAM with 16-bit memory width. Operating at 1.8V, it offers dual bank page burst access mode and self-refresh capability. Ideal for industrial applications requiring high memory density and fast access times up to 5.5 ns.

NT6SM16M32AK-S1

Nanya Technology

NT6SM16M32AK-S1 by Nanya Technology is a 16MX32 Synchronous DRAM with 16777216 words, 536870912 bit memory density, and operates at a max clock frequency of 166 MHz. Ideal for applications requiring fast data access and storage in devices like smartphones, tablets, and networking equipment.

K4S281632K-UC75

Samsung

Samsung's K4S281632K-UC75 is a 8MX16 DRAM with 133 MHz clock frequency, suitable for commercial applications. Features include 3.3V supply voltage, 70°C operating temperature, and 4096 refresh cycles. Ideal for systems requiring high-speed synchronous memory with low power consumption.

MT41K1G8TRF-125IT:E

Micron Technology

Micron Technology's MT41K1G8TRF-125IT:E is a DDR3L DRAM with 1GX8 organization, operating at 800 MHz. It features a thin profile grid array package and operates at 1.35V, suitable for applications requiring high-speed synchronous memory with low power consumption.

IS42S16320F-7TLI

Integrated Silicon Solution

IS42S16320F-7TLI by Integrated Silicon Solution is a 32MX16 Synchronous DRAM with 3.3V supply, operating at 143MHz. It features self-refresh mode and common I/O type, suitable for industrial applications requiring fast access times and high memory density.

AS4C4M16SA-6BINTR

Alliance Memory

AS4C4M16SA-6BINTR by Alliance Memory is a 3.3V Synchronous DRAM with 4MX16 organization, operating at -40 to 85 °C. It features self-refresh mode, industrial temperature grade, and thin profile grid array package suitable for various memory-intensive applications.

MT41K256M8DA-125IT:K

Micron Technology

Micron Technology's MT41K256M8DA-125IT:K is a DDR3L DRAM with 256MX8 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and multi-bank page burst access mode. Ideal for applications requiring high-speed and efficient memory performance in a compact grid array package.

MT46V32M16P-5B:FTR

Micron Technology

MT46V32M16P-5B:FTR by Micron Technology is a DDR1 DRAM with 32MX16 organization and 33554432 words. It operates synchronously, has self-refresh capability, and a max access time of 0.7 ns. It is commonly used in applications requiring high-speed memory such as computers and servers.

W66CP2NQUAGJ

Winbond Electronics

Winbond Electronics LPDDR4 DRAM W66CP2NQUAGJ features 128MX32 organization, operates at up to 1869.1 MHz clock frequency, and has a memory density of 4294967296 bit. Ideal for applications requiring high-speed synchronous operation in compact devices like smartphones and tablets.

S70KL1282DPBHA020

Cypress Semiconductor

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; JESD-30 Code: R-PBGA-B24; Screening Level: AEC-Q100;

AS4C32M16SB-7TINTR

Alliance Memory

SYNCHRONOUS DRAM; JESD-609 Code: e3; Terminal Finish: TIN; Moisture Sensitivity Level (MSL): 3;

IS42S16400J-6TLI

Integrated Silicon Solution

IS42S16400J-6TLI by Integrated Silicon Solution is a 4MX16 Synchronous DRAM with 166 MHz Clock Frequency. Operating at 3.3V, it offers 4096 Refresh Cycles and supports Four Bank Page Burst Access Mode. Ideal for industrial applications requiring high-speed memory performance in compact form factors.

S70KL1282DPBHI020

Cypress Semiconductor

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Maximum Clock Frequency (fCLK): 166 MHz; Technology: CMOS;