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K4M281633H-BN75

Manufacturer

Samsung
Manufacturer's Part Number

K4M281633H-BN75
Description

SYNCHRONOUS DRAM; Temperature Grade: OTHER; No. of Terminals: 54; Package Code: FBGA; Refresh Cycles: 4096; Package Shape: SQUARE;
Datasheet

Datasheet

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K4M281633H-BN75 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Standby Current:	.0005 Amp
Organization:	8MX16
Output Characteristics:	3-STATE
Sub-Category:	DRAMs
Surface Mount:	YES
Maximum Supply Current:	70 mA
Terminal Finish:	MATTE TIN
No. of Terminals:	54
Maximum Clock Frequency (fCLK):	133 MHz
No. of Words:	8388608 words
Terminal Position:	BOTTOM
Package Style (Meter):	GRID ARRAY, FINE PITCH
Technology:	CMOS
JESD-30 Code:	S-PBGA-B54
Package Shape:	SQUARE
Terminal Form:	BALL
Maximum Operating Temperature:	85 Cel
Package Code:	FBGA
Moisture Sensitivity Level (MSL):	1
Input/Output Type:	COMMON
Memory Density:	134217728 bit
Sequential Burst Length:	1,2,4,8,FP
Memory IC Type:	SYNCHRONOUS DRAM
JESD-609 Code:	e3
Minimum Operating Temperature:	-25 Cel
Memory Width:	16
Qualification:	Not Qualified
Package Equivalence Code:	BGA54,9X9,32
Refresh Cycles:	4096
Interleaved Burst Length:	1,2,4,8
Maximum Access Time:	5.4 ns
No. of Words Code:	8M
Terminal Pitch:	.8 mm
Temperature Grade:	OTHER
Power Supplies (V):	3/3.3

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