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K4B2G1646C-HCH9

Manufacturer

Samsung
Manufacturer's Part Number

K4B2G1646C-HCH9
Description

DDR3 DRAM; Temperature Grade: OTHER; No. of Terminals: 96; Package Code: FBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
Datasheet

Datasheet

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K4B2G1646C-HCH9 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Standby Current:	.012 Amp
Organization:	128MX16
Output Characteristics:	3-STATE
Maximum Time At Peak Reflow Temperature (s):	30
Sub-Category:	DRAMs
Surface Mount:	YES
Maximum Supply Current:	245 mA
Terminal Finish:	TIN SILVER COPPER
No. of Terminals:	96
Maximum Clock Frequency (fCLK):	667 MHz
No. of Words:	134217728 words
Terminal Position:	BOTTOM
Package Style (Meter):	GRID ARRAY, FINE PITCH
Technology:	CMOS
JESD-30 Code:	R-PBGA-B96
Package Shape:	RECTANGULAR
Terminal Form:	BALL
Maximum Operating Temperature:	85 Cel
Package Code:	FBGA
Moisture Sensitivity Level (MSL):	3
Input/Output Type:	COMMON
Memory Density:	2147483648 bit
Sequential Burst Length:	4,8
Memory IC Type:	DDR3 DRAM
JESD-609 Code:	e1
Minimum Operating Temperature:	0 Cel
Memory Width:	16
Qualification:	Not Qualified
Package Equivalence Code:	BGA96,9X16,32
Refresh Cycles:	8192
Interleaved Burst Length:	4,8
Maximum Access Time:	.255 ns
No. of Words Code:	128M
Nominal Supply Voltage / Vsup (V):	1.5
Peak Reflow Temperature (C):	260
Terminal Pitch:	.8 mm
Temperature Grade:	OTHER
Power Supplies (V):	1.5

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