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AS4C512M16D3L-12BCN

Manufacturer

Alliance Memory
Manufacturer's Part Number

AS4C512M16D3L-12BCN
Description

DDR3L DRAM; Temperature Grade: OTHER; No. of Terminals: 96; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
Datasheet

Datasheet

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AS4C512M16D3L-12BCN Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Access Mode:	MULTI BANK PAGE BURST
Minimum Supply Voltage (Vsup):	1.283 V
Sub-Category:	DRAMs
Surface Mount:	YES
Technology:	CMOS
Package Shape:	RECTANGULAR
Terminal Form:	BALL
Operating Mode:	SYNCHRONOUS
Package Code:	TFBGA
Moisture Sensitivity Level (MSL):	3
Input/Output Type:	COMMON
No. of Ports:	1
Self Refresh:	YES
Sequential Burst Length:	8
Memory Width:	16
Qualification:	Not Qualified
Package Equivalence Code:	BGA96,9X16,32
Additional Features:	AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V NOMINAL SUPPLY
Terminal Pitch:	.8 mm
Maximum Standby Current:	.011 Amp
Organization:	512MX16
Output Characteristics:	3-STATE
Maximum Seated Height:	1.2 mm
Maximum Supply Current:	220 mA
Terminal Finish:	Tin/Silver/Copper (Sn/Ag/Cu)
No. of Terminals:	96
Maximum Clock Frequency (fCLK):	800 MHz
No. of Words:	536870912 words
Terminal Position:	BOTTOM
Package Style (Meter):	GRID ARRAY, THIN PROFILE, FINE PITCH
JESD-30 Code:	R-PBGA-B96
Maximum Operating Temperature:	85 Cel
Width:	9 mm
Other Names:	1450-1271 AL41K512M16HA-125:A
Memory Density:	8589934592 bit
Memory IC Type:	DDR3L DRAM
JESD-609 Code:	e1
Minimum Operating Temperature:	0 Cel
No. of Functions:	1
Refresh Cycles:	8192
Interleaved Burst Length:	8
Length:	14 mm
Maximum Access Time:	.225 ns
No. of Words Code:	512M
Nominal Supply Voltage / Vsup (V):	1.35
Temperature Grade:	OTHER
Maximum Supply Voltage (Vsup):	1.45 V
Power Supplies (V):	1.35

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