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SBC807-25LT1G

Manufacturer

Onsemi
Manufacturer's Part Number

SBC807-25LT1G
Description

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .5 A;
Datasheet

Datasheet

1278 In Stock

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SBC807-25LT1G Technical Details

TYPE	DESCRIPTION
Nominal Transition Frequency (fT):	100 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.5 A
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	SWITCHING
Sub-Category:	Other Transistors
Surface Mount:	YES
Terminal Finish:	Matte Tin (Sn) - annealed
No. of Terminals:	3
Maximum Power Dissipation (Abs):	.3 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Maximum Operating Temperature:	150 Cel
Moisture Sensitivity Level (MSL):	1
Other Names:	ONSONSSBC807-25LT1G SBC807-25LT1GOSDKR SBC807-25LT1GOSTR 2156-SBC807-25LT1G-OS SBC807-25LT1GOSCT SBC807-25LT1G-ND
JEDEC-95 Code:	TO-236AB
Polarity or Channel Type:	PNP
Minimum DC Current Gain (hFE):	160
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Maximum Collector-Emitter Voltage:	45 V
Reference Standard:	AEC-Q101
Peak Reflow Temperature (C):	NOT SPECIFIED
Maximum VCEsat:	.7 V

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