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SMMBTA56LT1G

Manufacturer

Onsemi
Manufacturer's Part Number

SMMBTA56LT1G
Description

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .5 A;
Datasheet

Datasheet

78 In Stock

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SMMBTA56LT1G Technical Details

TYPE	DESCRIPTION
Nominal Transition Frequency (fT):	50 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.5 A
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	AMPLIFIER
Sub-Category:	Other Transistors
Surface Mount:	YES
Terminal Finish:	MATTE TIN
No. of Terminals:	3
Maximum Power Dissipation (Abs):	.3 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Maximum Operating Temperature:	150 Cel
Moisture Sensitivity Level (MSL):	1
Other Names:	SMMBTA56LT1GOSDKR ONSONSSMMBTA56LT1G SMMBTA56LT1G-ND SMMBTA56LT1GOSCT SMMBTA56LT1GOSTR 2156-SMMBTA56LT1G-OS 2832-SMMBTA56LT1GTR
JEDEC-95 Code:	TO-236AB
Polarity or Channel Type:	PNP
Minimum DC Current Gain (hFE):	100
JESD-609 Code:	e3
Maximum Collector-Emitter Voltage:	80 V
Reference Standard:	AEC-Q101
Peak Reflow Temperature (C):	260

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