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NTGS5120PT1G
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ManufacturerOnsemi
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Manufacturer's Part NumberNTGS5120PT1G
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DescriptionP-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.1 W; Maximum Drain-Source On Resistance: .111 ohm; Maximum Drain Current (Abs) (ID): 2.5 A;
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Datasheet
775 In Stock
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DetailsNTGS5120PT1G Technical Details
| TYPE | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | 40 |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 1.8 A |
| Sub-Category: | Other Transistors |
| Surface Mount: | YES |
| Terminal Finish: | Matte Tin (Sn) - annealed |
| No. of Terminals: | 6 |
| Maximum Power Dissipation (Abs): | 1.1 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-G6 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Drain-Source On Resistance: | .111 ohm |
| Moisture Sensitivity Level (MSL): | 1 |
| Other Names: | NTGS5120PT1GOSDKR NTGS5120PT1GOSTR NTGS5120PT1GOSCT NTGS5120PT1G-ND |
| Polarity or Channel Type: | P-CHANNEL |
| JESD-609 Code: | e3 |
| Minimum DS Breakdown Voltage: | 60 V |
| Qualification: | Not Qualified |
| Maximum Drain Current (Abs) (ID): | 2.5 A |
| Peak Reflow Temperature (C): | 260 |
