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MMBT4403LT1G

Manufacturer

Onsemi
Manufacturer's Part Number

MMBT4403LT1G
Description

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .6 A;
Datasheet

Datasheet

2255 In Stock

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MMBT4403LT1G Technical Details

TYPE	DESCRIPTION
Nominal Transition Frequency (fT):	200 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.6 A
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	SWITCHING
Maximum Turn On Time (ton):	35 ns
Surface Mount:	YES
Terminal Finish:	MATTE TIN
No. of Terminals:	3
Maximum Power Dissipation (Abs):	.225 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
Maximum Turn Off Time (toff):	255 ns
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Maximum Operating Temperature:	150 Cel
Maximum Power Dissipation Ambient:	.225 W
Moisture Sensitivity Level (MSL):	1
Other Names:	MMBT4403LT1GOS MMBT4403LT1GOSCT MMBT4403LT1GOSDKR MMBT4403LT1GOS-ND ONSONSMMBT4403LT1G MMBT4403LT1GOSTR 2156-MMBT4403LT1G-OS
JEDEC-95 Code:	TO-236AB
Polarity or Channel Type:	PNP
Minimum DC Current Gain (hFE):	100
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	40 V
Maximum Collector-Base Capacitance:	8.5 pF
Peak Reflow Temperature (C):	260
Maximum VCEsat:	.75 V

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