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BCX19LT1G
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ManufacturerOnsemi
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Manufacturer's Part NumberBCX19LT1G
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DescriptionNPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .5 A; Maximum Collector-Emitter Voltage: 45 V;
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Datasheet
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DetailsBCX19LT1G Technical Details
TYPE | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Maximum Collector Current (IC): | .5 A |
Maximum Time At Peak Reflow Temperature (s): | 40 |
Configuration: | SINGLE |
Transistor Element Material: | SILICON |
Sub-Category: | Other Transistors |
Surface Mount: | YES |
Terminal Finish: | Matte Tin (Sn) - annealed |
No. of Terminals: | 3 |
Maximum Power Dissipation (Abs): | .225 W |
Terminal Position: | DUAL |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PDSO-G3 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | GULL WING |
Maximum Operating Temperature: | 150 Cel |
Moisture Sensitivity Level (MSL): | 1 |
JEDEC-95 Code: | TO-236AB |
Polarity or Channel Type: | NPN |
Minimum DC Current Gain (hFE): | 40 |
JESD-609 Code: | e3 |
Qualification: | Not Qualified |
Maximum Collector-Emitter Voltage: | 45 V |
Peak Reflow Temperature (C): | 260 |