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BC847CDW1T1G
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ManufacturerOnsemi
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Manufacturer's Part NumberBC847CDW1T1G
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DescriptionNPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .38 W; Maximum Collector Current (IC): .1 A;
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Datasheet
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DetailsBC847CDW1T1G Technical Details
| TYPE | DESCRIPTION |
|---|---|
| Nominal Transition Frequency (fT): | 100 MHz |
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Collector Current (IC): | .1 A |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Configuration: | SEPARATE, 2 ELEMENTS |
| Transistor Element Material: | SILICON |
| Transistor Application: | AMPLIFIER |
| Sub-Category: | Other Transistors |
| Surface Mount: | YES |
| Terminal Finish: | MATTE TIN |
| No. of Terminals: | 6 |
| Maximum Power Dissipation (Abs): | .38 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-G6 |
| No. of Elements: | 2 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Maximum Operating Temperature: | 150 Cel |
| Moisture Sensitivity Level (MSL): | 1 |
| Other Names: | BC847CDW1T1GOSDKR 2156-BC847CDW1T1G-OS ONSONSBC847CDW1T1G BC847CDW1T1GOSTR BC847CDW1T1G-ND BC847CDW1T1GOSCT =BC847CDW1T1GOSCT-ND |
| Polarity or Channel Type: | NPN |
| Minimum DC Current Gain (hFE): | 420 |
| JESD-609 Code: | e3 |
| Minimum Operating Temperature: | -55 Cel |
| Qualification: | Not Qualified |
| Maximum Collector-Emitter Voltage: | 45 V |
| Peak Reflow Temperature (C): | 260 |
