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MMBT5401LT1G

Manufacturer

Onsemi
Manufacturer's Part Number

MMBT5401LT1G
Description

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .5 A;
Datasheet

Datasheet

1694 In Stock

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MMBT5401LT1G Technical Details

TYPE	DESCRIPTION
Nominal Transition Frequency (fT):	100 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.5 A
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	SWITCHING
Sub-Category:	Other Transistors
Surface Mount:	YES
Terminal Finish:	MATTE TIN
No. of Terminals:	3
Maximum Power Dissipation (Abs):	.3 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Maximum Operating Temperature:	150 Cel
Moisture Sensitivity Level (MSL):	1
Other Names:	MMBT5401LT1GOSCT ONSONSMMBT5401LT1G MMBT5401LT1GOS MMBT5401LT1GOSDKR MMBT5401LT1GOSTR 2156-MMBT5401LT1G-OS MMBT5401LT1GOS-ND 2832-MMBT5401LT1GTR
JEDEC-95 Code:	TO-236
Polarity or Channel Type:	PNP
Minimum DC Current Gain (hFE):	50
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	150 V
Peak Reflow Temperature (C):	260

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