MMBT5401LT1G by Onsemi

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MMBT5401LT1G

  • Manufacturer
    Onsemi
  • Manufacturer's Part Number
    MMBT5401LT1G
  • Description
    PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .5 A;
  • Datasheet

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MMBT5401LT1G Technical Details

TYPE DESCRIPTION
Nominal Transition Frequency (fT): 100 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .5 A
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Sub-Category: Other Transistors
Surface Mount: YES
Terminal Finish: MATTE TIN
No. of Terminals: 3
Maximum Power Dissipation (Abs): .3 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Operating Temperature: 150 Cel
Moisture Sensitivity Level (MSL): 1
Other Names: MMBT5401LT1GOSCT
ONSONSMMBT5401LT1G
MMBT5401LT1GOS
MMBT5401LT1GOSDKR
MMBT5401LT1GOSTR
2156-MMBT5401LT1G-OS
MMBT5401LT1GOS-ND
2832-MMBT5401LT1GTR
JEDEC-95 Code: TO-236
Polarity or Channel Type: PNP
Minimum DC Current Gain (hFE): 50
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 150 V
Peak Reflow Temperature (C): 260

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