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MMBT4401LT1G

Manufacturer

Onsemi
Manufacturer's Part Number

MMBT4401LT1G
Description

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .6 A;
Datasheet

Datasheet

2172 In Stock

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MMBT4401LT1G Technical Details

TYPE	DESCRIPTION
Nominal Transition Frequency (fT):	250 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.6 A
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	SWITCHING
Maximum Turn On Time (ton):	255 ns
Sub-Category:	Other Transistors
Surface Mount:	YES
Terminal Finish:	MATTE TIN
No. of Terminals:	3
Maximum Power Dissipation (Abs):	.3 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
Maximum Turn Off Time (toff):	35 ns
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Maximum Operating Temperature:	150 Cel
Maximum Power Dissipation Ambient:	.225 W
Moisture Sensitivity Level (MSL):	1
Other Names:	MMBT4401LT1GOS-ND MMBT4401LT1GOSTR MMBT4401LT1GOSCT 2832-MMBT4401LT1GTR MMBT4401LT1GOSDKR 2156-MMBT4401LT1G MMBT4401LT1GOS ONSTISMMBT4401LT1G 2156-MMBT4401LT1G-OS
JEDEC-95 Code:	TO-236AB
Polarity or Channel Type:	NPN
Minimum DC Current Gain (hFE):	40
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	40 V
Maximum Collector-Base Capacitance:	6.5 pF
Peak Reflow Temperature (C):	260
Maximum VCEsat:	.75 V

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