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MMBT4401LT1G
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ManufacturerOnsemi
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Manufacturer's Part NumberMMBT4401LT1G
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DescriptionNPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .6 A;
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Datasheet
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DetailsMMBT4401LT1G Technical Details
TYPE | DESCRIPTION |
---|---|
Nominal Transition Frequency (fT): | 250 MHz |
Package Body Material: | PLASTIC/EPOXY |
Maximum Collector Current (IC): | .6 A |
Maximum Time At Peak Reflow Temperature (s): | 30 |
Configuration: | SINGLE |
Transistor Element Material: | SILICON |
Transistor Application: | SWITCHING |
Maximum Turn On Time (ton): | 255 ns |
Sub-Category: | Other Transistors |
Surface Mount: | YES |
Terminal Finish: | MATTE TIN |
No. of Terminals: | 3 |
Maximum Power Dissipation (Abs): | .3 W |
Terminal Position: | DUAL |
Package Style (Meter): | SMALL OUTLINE |
Maximum Turn Off Time (toff): | 35 ns |
JESD-30 Code: | R-PDSO-G3 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | GULL WING |
Maximum Operating Temperature: | 150 Cel |
Maximum Power Dissipation Ambient: | .225 W |
Moisture Sensitivity Level (MSL): | 1 |
JEDEC-95 Code: | TO-236AB |
Polarity or Channel Type: | NPN |
Minimum DC Current Gain (hFE): | 40 |
JESD-609 Code: | e3 |
Minimum Operating Temperature: | -55 Cel |
Qualification: | Not Qualified |
Maximum Collector-Emitter Voltage: | 40 V |
Maximum Collector-Base Capacitance: | 6.5 pF |
Peak Reflow Temperature (C): | 260 |
Maximum VCEsat: | .75 V |