Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

BC547ATA

Manufacturer

Onsemi
Manufacturer's Part Number

BC547ATA
Description

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
Datasheet

Datasheet

Not In Stock

Popular Products

1N4148

Philips Components

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

BAV99W-7-F

Diodes Incorporated

Diodes Incorporated BAV99W-7-F is a fast recovery rectifier diode with 2 elements in series connected, center tap configuration. It has a max reverse recovery time of 0.004 us and can handle a max output current of 0.15 A. Ideal for applications requiring fast switching capabilities and operating temperatures ranging from -65 to 150 °C.

Details

BSS138NH6327XTSA2

Infineon Technologies

BSS138NH6327XTSA2 by Infineon is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for small signal applications. Operating in Enhancement Mode, it has 0.36W Power Dissipation and 3.5 ohm Drain-Source Resistance. With Gull Wing terminals and AEC-Q101 reference standard, it's suitable for automotive electronics due to its high temperature range of -55 to 150 °C.

Details

2N2222A

Baneasa S A

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .8 A; Qualification: Not Qualified;

Details

BSS138

Good-ark Electronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: 6 ohm; Minimum DS Breakdown Voltage: 50 V; Operating Mode: ENHANCEMENT MODE;

Details

BSS138

Taitron Components

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: 3.5 ohm; Maximum Drain Current (ID): .2 A; Peak Reflow Temperature (C): NOT SPECIFIED;

Details

2N7002

Samsung

N-CHANNEL AND P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain-Source On Resistance: 5 ohm; No. of Terminals: 3;

Details

1N4148

Semitron

RECTIFIER DIODE; Surface Mount: NO; JESD-609 Code: e0; Maximum Output Current: .15 A; Maximum Operating Temperature: 200 Cel; Maximum Reverse Recovery Time: .004 us;

Details

FDD5614P

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 42 W; Terminal Position: SINGLE; Terminal Form: GULL WING;

Details

2N7002

Siliconix

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain Current (ID): .115 A; Operating Mode: ENHANCEMENT MODE;

Details

SS14

Forward International Electronics

RECTIFIER DIODE; Surface Mount: YES; Maximum Operating Temperature: 150 Cel; No. of Elements: 1; No. of Phases: 1; Maximum Output Current: 1 A;

Details

M24308/2-1F

Adi Electronics

D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; MIL Conformity: YES; Filter Feature: NO; Mating Info.: MULTIPLE MATING PARTS AVAILABLE;

Details

EPCS4SI8N

Altera

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Parallel or Serial: SERIAL;

Details

LM555CMX

Onsemi

PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;

Details

LL4148

Micronas Semiconductor Holding Ag

RECTIFIER DIODE; Surface Mount: YES; No. of Phases: 1; Maximum Repetitive Peak Reverse Voltage: 100 V; Maximum Output Current: .2 A; Maximum Forward Voltage (VF): 1.2 V;

Details

M24308/2-1F

Itt Cannon

D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Additional Features: STANDARD: MIL-DTL-24308, POLARIZED; Mating Info.: MULTIPLE MATING PARTS AVAILABLE; Filter Feature: NO;

Details

LL4148

Weitron Technology

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

ERJ3GEY0R00V

Panasonic

ERJ3GEY0R00V by Panasonic is a SMT fixed resistor with 0 ohm resistance, suitable for jumper applications. It features a metal glaze/thick film technology, rated for temperatures b/w -55 to 155 °C. With a compact rectangular construction and matte tin over nickel terminal finish, it is ideal for surface mount installations in various electronic devices.

Details

1N4148WT

Bytesonic Electronics

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

1N4148WS

Sangdest Microelectronics (Nanjing)

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

BC547ATA Technical Details

TYPE	DESCRIPTION
Nominal Transition Frequency (fT):	300 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.1 A
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	SWITCHING
JEDEC-95 Code:	TO-92
Sub-Category:	Other Transistors
Polarity or Channel Type:	NPN
Surface Mount:	NO
Minimum DC Current Gain (hFE):	110
Terminal Finish:	MATTE TIN
JESD-609 Code:	e3
No. of Terminals:	3
Qualification:	Not Qualified
Maximum Power Dissipation (Abs):	.625 W
Maximum Collector-Emitter Voltage:	45 V
Terminal Position:	BOTTOM
Package Style (Meter):	CYLINDRICAL
JESD-30 Code:	O-PBCY-T3
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	THROUGH-HOLE
Maximum Operating Temperature:	150 Cel

Category Top Products

2N3904

Kodenshi Auk

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .2 A;

2N2219A

Nte Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .8 A;

2N2222AUB

Tt Electronics Plc

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .8 A; Maximum Turn On Time (ton): 35 ns; JESD-30 Code: R-CDSO-N3;

MMBT2907A

Rectron

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; No. of Terminals: 3; JESD-30 Code: R-PDSO-G3;

BC847C

Yangzhou Yangjie Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Terminal Form: GULL WING;

BC547B

Microchip Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .1 A; Terminal Form: THROUGH-HOLE; Qualification: Not Qualified;

BC847B

Weitronic Enterprise

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;

2N2222A

Secos

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .6 A; JEDEC-95 Code: TO-92;

MMBT3906

Diotec Semiconductor Ag

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .2 A; JEDEC-95 Code: TO-236;

KSP13TA

Onsemi

KSP13TA by Onsemi is a NPN Darlington BJT with hFE of 10000, IC of 0.5A, and fT of 125MHz. Ideal for applications requiring high current gain and frequency response in through-hole configurations.

2N2907(A)

Digitron Semiconductors

2N2907(A) by Digitron Semiconductors is a PNP BJT transistor with VCEsat of 0.4V, hFE of 100, and IC of 0.6A. Ideal for switching applications due to its fast ton of 45ns and toff of 100ns. Operates at a max temp of 175°C with a max VCE of 60V.

BC847B,235

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;

MMBT2222ALP4-7B

Diodes Incorporated

Diodes Inc.'s MMBT2222ALP4-7B is a NPN BJT transistor with 40V VCEO, 0.6A IC, and 300MHz fT. Ideal for small signal applications in automotive electronics due to AEC-Q101 compliance and 150°C max operating temp. Package: PLASTIC/EPOXY CHIP CARRIER with NO LEAD terminals.

2N3906

Microsemi

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;

2N3904

Space Power Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;

MMBTA42-7-F

Diodes Incorporated

Diodes Inc. MMBTA42-7-F is a NPN BJT transistor for switching applications. Features include VCEsat of 0.5V, hFE of 40, and VCEO of 300V. Ideal for small outline packages with Gull Wing terminals in surface mount configurations.

2N2905A

Motorola

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; Maximum Operating Temperature: 200 Cel;

2N2222A

Space Power Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

BC847C

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;

MMBT3904T-7-F

Diodes Incorporated

Diodes Inc. MMBT3904T-7-F is a NPN BJT with 40V VCEO, 0.2A IC, and 300MHz fT. Ideal for small signal amplification in compact electronic devices due to its small outline package and high transition frequency. Suitable for surface mount applications requiring fast switching speeds and low power dissipation.