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MMBT5551LT1G

Manufacturer

Onsemi
Manufacturer's Part Number

MMBT5551LT1G
Description

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .06 A; Maximum VCEsat: .2 V;
Datasheet

Datasheet

166 In Stock

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MMBT5551LT1G Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.06 A
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	SWITCHING
Surface Mount:	YES
Terminal Finish:	Matte Tin (Sn) - annealed
No. of Terminals:	3
Maximum Power Dissipation (Abs):	.3 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Maximum Operating Temperature:	150 Cel
Moisture Sensitivity Level (MSL):	1
Other Names:	MMBT5551LT1GOSDKR ONSMMBT5551LT1G MMBT5551LT1GOSTR MMBT5551LT1GOS-ND MMBT5551LT1GOSCT 2156-MMBT5551LT1G-OS MMBT5551LT1GOS
JEDEC-95 Code:	TO-236AB
Polarity or Channel Type:	NPN
Minimum DC Current Gain (hFE):	30
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	160 V
Peak Reflow Temperature (C):	260
Maximum VCEsat:	.2 V

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