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| QTY | Unit Price | Ext Price |
| 166 | $0.021 | $3.469 |
MMBT5551LT1G
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ManufacturerOnsemi
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Manufacturer's Part NumberMMBT5551LT1G
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DescriptionNPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .06 A; Maximum VCEsat: .2 V;
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Datasheet
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DetailsMMBT5551LT1G Technical Details
| TYPE | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Collector Current (IC): | .06 A |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Configuration: | SINGLE |
| Transistor Element Material: | SILICON |
| Transistor Application: | SWITCHING |
| Surface Mount: | YES |
| Terminal Finish: | Matte Tin (Sn) - annealed |
| No. of Terminals: | 3 |
| Maximum Power Dissipation (Abs): | .3 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-G3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Maximum Operating Temperature: | 150 Cel |
| Moisture Sensitivity Level (MSL): | 1 |
| Other Names: | MMBT5551LT1GOSDKR ONSMMBT5551LT1G MMBT5551LT1GOSTR MMBT5551LT1GOS-ND MMBT5551LT1GOSCT 2156-MMBT5551LT1G-OS MMBT5551LT1GOS |
| JEDEC-95 Code: | TO-236AB |
| Polarity or Channel Type: | NPN |
| Minimum DC Current Gain (hFE): | 30 |
| JESD-609 Code: | e3 |
| Minimum Operating Temperature: | -55 Cel |
| Qualification: | Not Qualified |
| Maximum Collector-Emitter Voltage: | 160 V |
| Peak Reflow Temperature (C): | 260 |
| Maximum VCEsat: | .2 V |
